A 280-GHz Self-Mixing Balanced Frequency Tripler in SiGe BiCMOS Technology

Arsen Turhaner; Yunfeng Dong; Vitaliy Zhurbenko; Tom Keinicke Johansen

doi:10.1109/LMWC.2020.3019589

A 280-GHz Self-Mixing Balanced Frequency Tripler in SiGe BiCMOS Technology

Arsen Turhaner, Yunfeng Dong, Vitaliy Zhurbenko, Tom Keinicke Johansen

Magnetic Resonance

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Abstract

In this letter, a self-mixing balanced frequency tripler is presented. It comprises a push–push frequency doubling stage followed by a single balanced mixing stage sharing the input power via coupled lines. The chip is fabricated using the SG13G2 (130-nm SiGe BiCMOS) technology of Innovations for High Performance Microelectronics (IHP). A measured output power of 3 dBm is achieved at 280 GHz with a dc-to-RF efficiency of 2.19%.

Original language	English
Article number	9187590
Journal	IEEE Microwave and Wireless Components Letters
Volume	30
Issue number	10
Number of pages	4
ISSN	1531-1309
DOIs	https://doi.org/10.1109/LMWC.2020.3019589
Publication status	Published - 2020

Keywords

Frequency tripler
mm-wave circuits
SiGe BiCMOS
Subharmonic mixer

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abstract = "In this letter, a self-mixing balanced frequency tripler is presented. It comprises a push–push frequency doubling stage followed by a single balanced mixing stage sharing the input power via coupled lines. The chip is fabricated using the SG13G2 (130-nm SiGe BiCMOS) technology of Innovations for High Performance Microelectronics (IHP). A measured output power of 3 dBm is achieved at 280 GHz with a dc-to-RF efficiency of 2.19\%.",

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A 280-GHz Self-Mixing Balanced Frequency Tripler in SiGe BiCMOS Technology

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