A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology

Tanjil Shivan; Maruf Hossain; Ralf Doerner; Steffen Schulz; Tom  Johansen; Sebastian Boppel; Wolfgang Heinrich; Viktor Krozer

A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology

Tanjil Shivan^*
, Maruf Hossain
, Ralf Doerner
, Steffen Schulz
, Tom Johansen
, Sebastian Boppel
, Wolfgang Heinrich
, Viktor Krozer

^*Corresponding author for this work

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6 %. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.

Original language	English
Title of host publication	2019 IEEE MTT-S International Microwave Symposium (IMS)
Number of pages	4
Publisher	IEEE
Publication date	2019
Pages	1253-1256
Article number	Th2D-3
ISBN (Electronic)	978-1-7281-1309-8
Publication status	Published - 2019
Event	2019 IEEE MTT-S International Microwave Symposium - Boston Convention Center, Boston, United States Duration: 2 Jun 2019 → 7 Jun 2019 https://ieeexplore.ieee.org/xpl/conhome/8697340/proceeding

Conference

Conference	2019 IEEE MTT-S International Microwave Symposium
Location	Boston Convention Center
Country/Territory	United States
City	Boston
Period	02/06/2019 → 07/06/2019
Internet address	https://ieeexplore.ieee.org/xpl/conhome/8697340/proceeding

Keywords

Distributed amplifier
InP double heterojunction bipolar transistor (DHBT)
Monolithic microwave integrated circuit (MMIC)
Travelling wave amplifier

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@inproceedings{cfec2e3540a0421ca2623df25d6cf7e4,

title = "A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology",

abstract = "This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6 \%. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.",

keywords = "Distributed amplifier, InP double heterojunction bipolar transistor (DHBT), Monolithic microwave integrated circuit (MMIC), Travelling wave amplifier",

author = "Tanjil Shivan and Maruf Hossain and Ralf Doerner and Steffen Schulz and Tom Johansen and Sebastian Boppel and Wolfgang Heinrich and Viktor Krozer",

year = "2019",

language = "English",

pages = "1253--1256",

booktitle = "2019 IEEE MTT-S International Microwave Symposium (IMS)",

publisher = "IEEE",

address = "United States",

note = "2019 IEEE MTT-S International Microwave Symposium, IMS 2019 ; Conference date: 02-06-2019 Through 07-06-2019",

url = "https://ieeexplore.ieee.org/xpl/conhome/8697340/proceeding",

}

Shivan, T, Hossain, M, Doerner, R, Schulz, S, Johansen, T, Boppel, S, Heinrich, W & Krozer, V 2019, A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology. in 2019 IEEE MTT-S International Microwave Symposium (IMS)., Th2D-3, IEEE, pp. 1253-1256, 2019 IEEE MTT-S International Microwave Symposium, Boston, Massachusetts, United States, 02/06/2019.

TY - GEN

T1 - A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology

AU - Shivan, Tanjil

AU - Hossain, Maruf

AU - Doerner, Ralf

AU - Schulz, Steffen

AU - Johansen, Tom

AU - Boppel, Sebastian

AU - Heinrich, Wolfgang

AU - Krozer, Viktor

PY - 2019

Y1 - 2019

N2 - This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6 %. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.

AB - This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6 %. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.

KW - Distributed amplifier

KW - InP double heterojunction bipolar transistor (DHBT)

KW - Monolithic microwave integrated circuit (MMIC)

KW - Travelling wave amplifier

M3 - Article in proceedings

SP - 1253

EP - 1256

BT - 2019 IEEE MTT-S International Microwave Symposium (IMS)

PB - IEEE

T2 - 2019 IEEE MTT-S International Microwave Symposium

Y2 - 2 June 2019 through 7 June 2019

ER -

A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology

Abstract

Conference

Keywords

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