A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology

Tanjil Shivan*, Maruf Hossain, Ralf Doerner, Steffen Schulz, Tom Johansen, Sebastian Boppel, Wolfgang Heinrich, Viktor Krozer

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review


    This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6 %. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.
    Original languageEnglish
    Title of host publication2019 IEEE MTT-S International Microwave Symposium (IMS)
    Number of pages4
    Publication date2019
    Article numberTh2D-3
    ISBN (Electronic)978-1-7281-1309-8
    Publication statusPublished - 2019
    Event2019 IEEE MTT-S International Microwave Symposium - Boston Convention Center, Boston, United States
    Duration: 2 Jun 20197 Jun 2019


    Conference2019 IEEE MTT-S International Microwave Symposium
    LocationBoston Convention Center
    Country/TerritoryUnited States
    Internet address


    • Distributed amplifier
    • InP double heterojunction bipolar transistor (DHBT)
    • Monolithic microwave integrated circuit (MMIC)
    • Travelling wave amplifier


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