A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology

Tanjil Shivan*, Maruf Hossain, Ralf Doerner, Steffen Schulz, Tom Johansen, Sebastian Boppel, Wolfgang Heinrich, Viktor Krozer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6 %. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.
Original languageEnglish
Title of host publication2019 IEEE MTT-S International Microwave Symposium (IMS)
Number of pages4
PublisherIEEE
Publication date2019
Pages1253-1256
Article numberTh2D-3
ISBN (Electronic)978-1-7281-1309-8
Publication statusPublished - 2019
Event2019 IEEE MTT International Microwave Symposium - Boston Convention Center, Boston, United States
Duration: 2 Jun 20197 Jun 2019
https://ims-ieee.org/

Conference

Conference2019 IEEE MTT International Microwave Symposium
LocationBoston Convention Center
CountryUnited States
CityBoston
Period02/06/201907/06/2019
Internet address

Keywords

  • Distributed amplifier
  • InP double heterojunction bipolar transistor (DHBT)
  • Monolithic microwave integrated circuit (MMIC)
  • Travelling wave amplifier

Cite this

Shivan, T., Hossain, M., Doerner, R., Schulz, S., Johansen, T., Boppel, S., ... Krozer, V. (2019). A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology. In 2019 IEEE MTT-S International Microwave Symposium (IMS) (pp. 1253-1256). [Th2D-3] IEEE.
Shivan, Tanjil ; Hossain, Maruf ; Doerner, Ralf ; Schulz, Steffen ; Johansen, Tom ; Boppel, Sebastian ; Heinrich, Wolfgang ; Krozer, Viktor. / A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology. 2019 IEEE MTT-S International Microwave Symposium (IMS). IEEE, 2019. pp. 1253-1256
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title = "A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology",
abstract = "This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6 {\%}. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.",
keywords = "Distributed amplifier, InP double heterojunction bipolar transistor (DHBT), Monolithic microwave integrated circuit (MMIC), Travelling wave amplifier",
author = "Tanjil Shivan and Maruf Hossain and Ralf Doerner and Steffen Schulz and Tom Johansen and Sebastian Boppel and Wolfgang Heinrich and Viktor Krozer",
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booktitle = "2019 IEEE MTT-S International Microwave Symposium (IMS)",
publisher = "IEEE",
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Shivan, T, Hossain, M, Doerner, R, Schulz, S, Johansen, T, Boppel, S, Heinrich, W & Krozer, V 2019, A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology. in 2019 IEEE MTT-S International Microwave Symposium (IMS)., Th2D-3, IEEE, pp. 1253-1256, 2019 IEEE MTT International Microwave Symposium, Boston, United States, 02/06/2019.

A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology. / Shivan, Tanjil; Hossain, Maruf; Doerner, Ralf; Schulz, Steffen; Johansen, Tom ; Boppel, Sebastian; Heinrich, Wolfgang; Krozer, Viktor.

2019 IEEE MTT-S International Microwave Symposium (IMS). IEEE, 2019. p. 1253-1256 Th2D-3.

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

TY - GEN

T1 - A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology

AU - Shivan, Tanjil

AU - Hossain, Maruf

AU - Doerner, Ralf

AU - Schulz, Steffen

AU - Johansen, Tom

AU - Boppel, Sebastian

AU - Heinrich, Wolfgang

AU - Krozer, Viktor

PY - 2019

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N2 - This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6 %. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.

AB - This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6 %. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.

KW - Distributed amplifier

KW - InP double heterojunction bipolar transistor (DHBT)

KW - Monolithic microwave integrated circuit (MMIC)

KW - Travelling wave amplifier

M3 - Article in proceedings

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BT - 2019 IEEE MTT-S International Microwave Symposium (IMS)

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Shivan T, Hossain M, Doerner R, Schulz S, Johansen T, Boppel S et al. A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology. In 2019 IEEE MTT-S International Microwave Symposium (IMS). IEEE. 2019. p. 1253-1256. Th2D-3