Abstract
This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6 %. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.
| Original language | English |
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| Title of host publication | 2019 IEEE MTT-S International Microwave Symposium (IMS) |
| Number of pages | 4 |
| Publisher | IEEE |
| Publication date | 2019 |
| Pages | 1253-1256 |
| Article number | Th2D-3 |
| ISBN (Electronic) | 978-1-7281-1309-8 |
| Publication status | Published - 2019 |
| Event | 2019 IEEE MTT-S International Microwave Symposium - Boston Convention Center, Boston, United States Duration: 2 Jun 2019 → 7 Jun 2019 https://ieeexplore.ieee.org/xpl/conhome/8697340/proceeding |
Conference
| Conference | 2019 IEEE MTT-S International Microwave Symposium |
|---|---|
| Location | Boston Convention Center |
| Country/Territory | United States |
| City | Boston |
| Period | 02/06/2019 → 07/06/2019 |
| Internet address |
Keywords
- Distributed amplifier
- InP double heterojunction bipolar transistor (DHBT)
- Monolithic microwave integrated circuit (MMIC)
- Travelling wave amplifier