A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAE

Amit Shrestha; Ralf Doerner; Hady Yacoub; Tom K. Johansen; Wolfgang Heinrich; Viktor Krozer; Matthias Rudolph; Andreas Wentzel

doi:10.23919/EuMIC50153.2022.9783638

A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAE

Amit Shrestha^*, Ralf Doerner, Hady Yacoub, Tom K. Johansen, Wolfgang Heinrich, Viktor Krozer, Matthias Rudolph, Andreas Wentzel

^*Corresponding author for this work

Ferdinand-Braun-Institut

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

This paper presents for the first time a class-F-like W-band power amplifier in InP DHBT technology. It reaches a power added efficiency (PAE) of 25.4% at 8.8 dBm output power (Pout) at 101 GHz. At the same frequency, the best PAE/Pout trade-off is achieved with 24%/10.9 dBm. The switch-mode PA applies a two-finger 0.5 µm InP-DHBT and delivers a saturated output power of 12.5 dBm and a maximum large-signal gain of 5 dB. To the authors’ best knowledge this is the first class-F-like W-band PA to date.

Original language	English
Title of host publication	Proceedings of the 16th European Microwave Integrated Circuits Conference
Publisher	IEEE
Publication date	2022
Pages	225-228
ISBN (Electronic)	978-2-87487-064-4
DOIs	https://doi.org/10.23919/EuMIC50153.2022.9783638
Publication status	Published - 2022
Event	16^th European Microwave Integrated Circuits Conference - London, United Kingdom Duration: 13 Feb 2022 → 18 Feb 2022

Conference

Conference	16^th European Microwave Integrated Circuits Conference
Country/Territory	United Kingdom
City	London
Period	13/02/2022 → 18/02/2022

Access to Document

10.23919/EuMIC50153.2022.9783638

OpenUrl availability

Full text

Cite this

@inproceedings{81ffec1d3aa242fa9467636080cd290b,

title = "A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAE",

abstract = "This paper presents for the first time a class-F-like W-band power amplifier in InP DHBT technology. It reaches a power added efficiency (PAE) of 25.4% at 8.8 dBm output power (Pout) at 101 GHz. At the same frequency, the best PAE/Pout trade-off is achieved with 24%/10.9 dBm. The switch-mode PA applies a two-finger 0.5 µm InP-DHBT and delivers a saturated output power of 12.5 dBm and a maximum large-signal gain of 5 dB. To the authors{\textquoteright} best knowledge this is the first class-F-like W-band PA to date.",

author = "Amit Shrestha and Ralf Doerner and Hady Yacoub and Johansen, {Tom K.} and Wolfgang Heinrich and Viktor Krozer and Matthias Rudolph and Andreas Wentzel",

year = "2022",

doi = "10.23919/EuMIC50153.2022.9783638",

language = "English",

pages = "225--228",

booktitle = "Proceedings of the 16th European Microwave Integrated Circuits Conference",

publisher = "IEEE",

address = "United States",

note = "16<sup>th</sup> European Microwave Integrated Circuits Conference, EuMIC 2021 ; Conference date: 13-02-2022 Through 18-02-2022",

}

Shrestha, A, Doerner, R, Yacoub, H, Johansen, TK, Heinrich, W, Krozer, V, Rudolph, M & Wentzel, A 2022, A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAE. in Proceedings of the 16th European Microwave Integrated Circuits Conference. IEEE, pp. 225-228, 16^th European Microwave Integrated Circuits Conference, London, United Kingdom, 13/02/2022. https://doi.org/10.23919/EuMIC50153.2022.9783638

TY - GEN

T1 - A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAE

AU - Shrestha, Amit

AU - Doerner, Ralf

AU - Yacoub, Hady

AU - Johansen, Tom K.

AU - Heinrich, Wolfgang

AU - Krozer, Viktor

AU - Rudolph, Matthias

AU - Wentzel, Andreas

PY - 2022

Y1 - 2022

N2 - This paper presents for the first time a class-F-like W-band power amplifier in InP DHBT technology. It reaches a power added efficiency (PAE) of 25.4% at 8.8 dBm output power (Pout) at 101 GHz. At the same frequency, the best PAE/Pout trade-off is achieved with 24%/10.9 dBm. The switch-mode PA applies a two-finger 0.5 µm InP-DHBT and delivers a saturated output power of 12.5 dBm and a maximum large-signal gain of 5 dB. To the authors’ best knowledge this is the first class-F-like W-band PA to date.

AB - This paper presents for the first time a class-F-like W-band power amplifier in InP DHBT technology. It reaches a power added efficiency (PAE) of 25.4% at 8.8 dBm output power (Pout) at 101 GHz. At the same frequency, the best PAE/Pout trade-off is achieved with 24%/10.9 dBm. The switch-mode PA applies a two-finger 0.5 µm InP-DHBT and delivers a saturated output power of 12.5 dBm and a maximum large-signal gain of 5 dB. To the authors’ best knowledge this is the first class-F-like W-band PA to date.

U2 - 10.23919/EuMIC50153.2022.9783638

DO - 10.23919/EuMIC50153.2022.9783638

M3 - Article in proceedings

SP - 225

EP - 228

BT - Proceedings of the 16th European Microwave Integrated Circuits Conference

PB - IEEE

T2 - 16<sup>th</sup> European Microwave Integrated Circuits Conference

Y2 - 13 February 2022 through 18 February 2022

ER -

A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAE

Abstract

Conference

Access to Document

OpenUrl availability

Fingerprint

Cite this