A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAE

Amit Shrestha*, Ralf Doerner, Hady Yacoub, Tom K. Johansen, Wolfgang Heinrich, Viktor Krozer, Matthias Rudolph, Andreas Wentzel

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

This paper presents for the first time a class-F-like W-band power amplifier in InP DHBT technology. It reaches a power added efficiency (PAE) of 25.4% at 8.8 dBm output power (Pout) at 101 GHz. At the same frequency, the best PAE/Pout trade-off is achieved with 24%/10.9 dBm. The switch-mode PA applies a two-finger 0.5 µm InP-DHBT and delivers a saturated output power of 12.5 dBm and a maximum large-signal gain of 5 dB. To the authors’ best knowledge this is the first class-F-like W-band PA to date.
Original languageEnglish
Title of host publicationProceedings of the 16th European Microwave Integrated Circuits Conference
PublisherIEEE
Publication date2022
Pages225-228
ISBN (Electronic)978-2-87487-064-4
DOIs
Publication statusPublished - 2022
Event16th European Microwave Integrated Circuits Conference - London, United Kingdom
Duration: 13 Feb 202218 Feb 2022

Conference

Conference16th European Microwave Integrated Circuits Conference
Country/TerritoryUnited Kingdom
CityLondon
Period13/02/202218/02/2022

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