This paper presents for the first time a class-F-like W-band power amplifier in InP DHBT technology. It reaches a power added efficiency (PAE) of 25.4% at 8.8 dBm output power (Pout) at 101 GHz. At the same frequency, the best PAE/Pout trade-off is achieved with 24%/10.9 dBm. The switch-mode PA applies a two-finger 0.5 µm InP-DHBT and delivers a saturated output power of 12.5 dBm and a maximum large-signal gain of 5 dB. To the authors’ best knowledge this is the first class-F-like W-band PA to date.
|Title of host publication||Proceedings of the 16th European Microwave Integrated Circuits Conference|
|Publication status||Published - 2022|
|Event||16th European Microwave Integrated Circuits Conference - London, United Kingdom|
Duration: 13 Feb 2022 → 18 Feb 2022
|Conference||16th European Microwave Integrated Circuits Conference|
|Period||13/02/2022 → 18/02/2022|