A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter

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This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a stepdown from 200-300 V to 0-28 V. Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the AC resistances of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V on a laboratory prototype operating at 10 MHz. At 20 W the experimental prototype achieved an efficiency of 85.2%.
Original languageEnglish
Title of host publicationProceedings of The 2018 International Power Electronics Conference
PublisherIEEE
Publication date2018
Pages4066-4073
ISBN (Print)9784886864055
DOIs
Publication statusPublished - 2018
Event2018 International Power Electronics Conference - TOKI MESSE Niigata Convention Center, Niigata City, Japan
Duration: 20 May 201824 May 2018
http://www.ipec2018.org/

Conference

Conference2018 International Power Electronics Conference
LocationTOKI MESSE Niigata Convention Center
CountryJapan
CityNiigata City
Period20/05/201824/05/2018
Internet address
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • DC-DC conversion, Gallium Nitride, High frequency, Resonant conversion, Soft switching, Class-DE

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