A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter: Design and Magnetics Investigation

Prasanth Thummala*, Dorai Babu Yelaverthi, Regan Andrew Zane, Ziwei Ouyang, Michael A. E. Andersen

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a step-down from 200-300 V to 0-28 V. Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the parameters of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V and 5 W, 254 V to 14 V on a laboratory prototype operating at 10 MHz. At 20 W the experimental prototype achieved an efficiency of 85.2%.
Original languageEnglish
JournalIEEE Transactions on Industry Applications
Volume55
Issue number4
Pages (from-to)3889-3900
Number of pages12
ISSN0093-9994
DOIs
Publication statusPublished - 2019

Keywords

  • DC-DC conversion
  • Gallium Nitride
  • High frequency
  • Resonant conversion
  • Soft switching
  • Class-DE
  • Finite-element modeling

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