Abstract
This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a step-down from 200-300 V to 0-28 V. Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the parameters of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V and 5 W, 254 V to 14 V on a laboratory prototype operating at 10 MHz. At 20 W the experimental prototype achieved an efficiency of 85.2%.
Original language | English |
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Journal | IEEE Transactions on Industry Applications |
Volume | 55 |
Issue number | 4 |
Pages (from-to) | 3889-3900 |
Number of pages | 12 |
ISSN | 0093-9994 |
DOIs | |
Publication status | Published - 2019 |
Keywords
- DC-DC conversion
- Gallium Nitride
- High frequency
- Resonant conversion
- Soft switching
- Class-DE
- Finite-element modeling