A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter: Design and Magnetics Investigation

Prasanth Thummala*, Dorai Babu Yelaverthi, Regan Andrew Zane, Ziwei Ouyang, Michael A. E. Andersen

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a step-down from 200-300 V to 0-28 V. Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the parameters of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V and 5 W, 254 V to 14 V on a laboratory prototype operating at 10 MHz. At 20 W the experimental prototype achieved an efficiency of 85.2%.
Original languageEnglish
JournalIEEE Transactions on Industry Applications
Volume55
Issue number4
Pages (from-to)3889-3900
Number of pages12
ISSN0093-9994
DOIs
Publication statusPublished - 2019

Keywords

  • DC-DC conversion
  • Gallium Nitride
  • High frequency
  • Resonant conversion
  • Soft switching
  • Class-DE
  • Finite-element modeling

Cite this

@article{3ac3e1c60bfb4c46b37486164723e140,
title = "A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter: Design and Magnetics Investigation",
abstract = "This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a step-down from 200-300 V to 0-28 V. Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the parameters of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V and 5 W, 254 V to 14 V on a laboratory prototype operating at 10 MHz. At 20 W the experimental prototype achieved an efficiency of 85.2{\%}.",
keywords = "DC-DC conversion, Gallium Nitride, High frequency, Resonant conversion, Soft switching, Class-DE, Finite-element modeling",
author = "Prasanth Thummala and Yelaverthi, {Dorai Babu} and Zane, {Regan Andrew} and Ziwei Ouyang and Andersen, {Michael A. E.}",
year = "2019",
doi = "10.1109/TIA.2019.2904455",
language = "English",
volume = "55",
pages = "3889--3900",
journal = "I E E E Transactions on Industry Applications",
issn = "0093-9994",
publisher = "Institute of Electrical and Electronics Engineers",
number = "4",

}

A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter: Design and Magnetics Investigation. / Thummala, Prasanth; Yelaverthi, Dorai Babu; Zane, Regan Andrew; Ouyang, Ziwei; Andersen, Michael A. E.

In: IEEE Transactions on Industry Applications, Vol. 55, No. 4, 2019, p. 3889-3900.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter: Design and Magnetics Investigation

AU - Thummala, Prasanth

AU - Yelaverthi, Dorai Babu

AU - Zane, Regan Andrew

AU - Ouyang, Ziwei

AU - Andersen, Michael A. E.

PY - 2019

Y1 - 2019

N2 - This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a step-down from 200-300 V to 0-28 V. Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the parameters of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V and 5 W, 254 V to 14 V on a laboratory prototype operating at 10 MHz. At 20 W the experimental prototype achieved an efficiency of 85.2%.

AB - This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a step-down from 200-300 V to 0-28 V. Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the parameters of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V and 5 W, 254 V to 14 V on a laboratory prototype operating at 10 MHz. At 20 W the experimental prototype achieved an efficiency of 85.2%.

KW - DC-DC conversion

KW - Gallium Nitride

KW - High frequency

KW - Resonant conversion

KW - Soft switching

KW - Class-DE

KW - Finite-element modeling

U2 - 10.1109/TIA.2019.2904455

DO - 10.1109/TIA.2019.2904455

M3 - Journal article

VL - 55

SP - 3889

EP - 3900

JO - I E E E Transactions on Industry Applications

JF - I E E E Transactions on Industry Applications

SN - 0093-9994

IS - 4

ER -