A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter

Prasanth Thummala, Dorai Babu Yelaverthi, Regan Zane, Ziwei Ouyang, Michael A. E. Andersen

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Abstract

This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a stepdown from 200-300 V to 0-28 V. Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the AC resistances of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V on a laboratory prototype operating at 10 MHz. At 20 W the experimental prototype achieved an efficiency of 85.2%.
Original languageEnglish
Title of host publicationProceedings of The 2018 International Power Electronics Conference
PublisherIEEE
Publication date2018
Pages4066-4073
ISBN (Print)9784886864055
DOIs
Publication statusPublished - 2018
Event2018 International Power Electronics Conference - TOKI MESSE Niigata Convention Center, Niigata City, Japan
Duration: 20 May 201824 May 2018
http://www.ipec2018.org/

Conference

Conference2018 International Power Electronics Conference
LocationTOKI MESSE Niigata Convention Center
CountryJapan
CityNiigata City
Period20/05/201824/05/2018
Internet address

Keywords

  • DC-DC conversion
  • Gallium Nitride
  • High frequency
  • Resonant conversion
  • Soft switching
  • Class-DE

Cite this

Thummala, P., Yelaverthi, D. B., Zane, R., Ouyang, Z., & Andersen, M. A. E. (2018). A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter. In Proceedings of The 2018 International Power Electronics Conference (pp. 4066-4073). IEEE. https://doi.org/10.23919/IPEC.2018.8506666
Thummala, Prasanth ; Yelaverthi, Dorai Babu ; Zane, Regan ; Ouyang, Ziwei ; Andersen, Michael A. E. / A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter. Proceedings of The 2018 International Power Electronics Conference. IEEE, 2018. pp. 4066-4073
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title = "A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter",
abstract = "This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a stepdown from 200-300 V to 0-28 V. Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the AC resistances of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V on a laboratory prototype operating at 10 MHz. At 20 W the experimental prototype achieved an efficiency of 85.2{\%}.",
keywords = "DC-DC conversion, Gallium Nitride, High frequency, Resonant conversion, Soft switching, Class-DE",
author = "Prasanth Thummala and Yelaverthi, {Dorai Babu} and Regan Zane and Ziwei Ouyang and Andersen, {Michael A. E.}",
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Thummala, P, Yelaverthi, DB, Zane, R, Ouyang, Z & Andersen, MAE 2018, A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter. in Proceedings of The 2018 International Power Electronics Conference. IEEE, pp. 4066-4073, 2018 International Power Electronics Conference, Niigata City, Japan, 20/05/2018. https://doi.org/10.23919/IPEC.2018.8506666

A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter. / Thummala, Prasanth; Yelaverthi, Dorai Babu ; Zane, Regan; Ouyang, Ziwei; Andersen, Michael A. E.

Proceedings of The 2018 International Power Electronics Conference. IEEE, 2018. p. 4066-4073.

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

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AB - This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a stepdown from 200-300 V to 0-28 V. Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the AC resistances of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V on a laboratory prototype operating at 10 MHz. At 20 W the experimental prototype achieved an efficiency of 85.2%.

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Thummala P, Yelaverthi DB, Zane R, Ouyang Z, Andersen MAE. A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter. In Proceedings of The 2018 International Power Electronics Conference. IEEE. 2018. p. 4066-4073 https://doi.org/10.23919/IPEC.2018.8506666