A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter

Prasanth Thummala, Dorai Babu Yelaverthi, Regan Zane, Ziwei Ouyang, Michael A. E. Andersen

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    Abstract

    This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a stepdown from 200-300 V to 0-28 V. Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the AC resistances of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V on a laboratory prototype operating at 10 MHz. At 20 W the experimental prototype achieved an efficiency of 85.2%.
    Original languageEnglish
    Title of host publicationProceedings of The 2018 International Power Electronics Conference
    PublisherIEEE
    Publication date2018
    Pages4066-4073
    ISBN (Print)9784886864055
    DOIs
    Publication statusPublished - 2018
    Event2018 International Power Electronics Conference - TOKI MESSE Niigata Convention Center, Niigata City, Japan
    Duration: 20 May 201824 May 2018

    Conference

    Conference2018 International Power Electronics Conference
    LocationTOKI MESSE Niigata Convention Center
    Country/TerritoryJapan
    CityNiigata City
    Period20/05/201824/05/2018

    Keywords

    • DC-DC conversion
    • Gallium Nitride
    • High frequency
    • Resonant conversion
    • Soft switching
    • Class-DE

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