75 GHz InP DHBT power amplifier based on two-stacked transistors

Michele Squartecchia, Virginio Midili, Tom Keinicke Johansen, Jean-Yves Dupuy, Virginie Nodjiadjim, Muriel Riet, Agnieszka Konczykowska

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver stage of the power amplifier. Besides the series voltage addition of the stacked structure, parallel power combining techniques were adopted to increase the output power of the MMIC amplifier, with four-way and eight-way corporate power combiners at the driver and power stages, respectively. At 75 GHz, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm.
Original languageEnglish
Title of host publicationProceedings of 2017 Asia Pacific Microwave Conference
Number of pages4
PublisherIEEE
Publication date2017
Pages314-317
DOIs
Publication statusPublished - 2017
Event2017 IEEE Asia Pacific Microwave Conference - Kuala Lumpur, Malaysia
Duration: 13 Nov 201716 Nov 2017

Conference

Conference2017 IEEE Asia Pacific Microwave Conference
CountryMalaysia
CityKuala Lumpur
Period13/11/201716/11/2017

Keywords

  • Power amplifier
  • Indium phosphide
  • Power combining
  • Stacked transistor
  • Double heterojunction bipolar transistor (DHBT)

Cite this

Squartecchia, M., Midili, V., Johansen, T. K., Dupuy, J-Y., Nodjiadjim, V., Riet, M., & Konczykowska, A. (2017). 75 GHz InP DHBT power amplifier based on two-stacked transistors. In Proceedings of 2017 Asia Pacific Microwave Conference (pp. 314-317). IEEE. https://doi.org/10.1109/APMC.2017.8251442