75 GHz InP DHBT power amplifier based on two-stacked transistors

Michele Squartecchia; Virginio Midili; Tom Keinicke Johansen; Jean-Yves Dupuy; Virginie Nodjiadjim; Muriel Riet; Agnieszka Konczykowska

doi:10.1109/APMC.2017.8251442

75 GHz InP DHBT power amplifier based on two-stacked transistors

Michele Squartecchia, Virginio Midili, Tom Keinicke Johansen, Jean-Yves Dupuy, Virginie Nodjiadjim, Muriel Riet, Agnieszka Konczykowska

III-V Lab

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver stage of the power amplifier. Besides the series voltage addition of the stacked structure, parallel power combining techniques were adopted to increase the output power of the MMIC amplifier, with four-way and eight-way corporate power combiners at the driver and power stages, respectively. At 75 GHz, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm.

Original language	English
Title of host publication	Proceedings of 2017 Asia Pacific Microwave Conference
Number of pages	4
Publisher	IEEE
Publication date	2017
Pages	314-317
DOIs	https://doi.org/10.1109/APMC.2017.8251442
Publication status	Published - 2017
Event	2017 IEEE Asia Pacific Microwave Conference - Kuala Lumpur, Malaysia Duration: 13 Nov 2017 → 16 Nov 2017 https://ieeexplore.ieee.org/xpl/conhome/8239375/proceeding

Conference

Conference	2017 IEEE Asia Pacific Microwave Conference
Country/Territory	Malaysia
City	Kuala Lumpur
Period	13/11/2017 → 16/11/2017
Internet address	https://ieeexplore.ieee.org/xpl/conhome/8239375/proceeding

Keywords

Power amplifier
Indium phosphide
Power combining
Stacked transistor
Double heterojunction bipolar transistor (DHBT)

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10.1109/APMC.2017.8251442

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@inproceedings{6766629ff0f9417eae9ee7067437d91a,

title = "75 GHz InP DHBT power amplifier based on two-stacked transistors",

abstract = "In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver stage of the power amplifier. Besides the series voltage addition of the stacked structure, parallel power combining techniques were adopted to increase the output power of the MMIC amplifier, with four-way and eight-way corporate power combiners at the driver and power stages, respectively. At 75 GHz, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm.",

keywords = "Power amplifier, Indium phosphide, Power combining, Stacked transistor, Double heterojunction bipolar transistor (DHBT)",

author = "Michele Squartecchia and Virginio Midili and Johansen, \{Tom Keinicke\} and Jean-Yves Dupuy and Virginie Nodjiadjim and Muriel Riet and Agnieszka Konczykowska",

year = "2017",

doi = "10.1109/APMC.2017.8251442",

language = "English",

pages = "314--317",

booktitle = "Proceedings of 2017 Asia Pacific Microwave Conference",

publisher = "IEEE",

address = "United States",

note = "2017 IEEE Asia Pacific Microwave Conference , APMC 2017 ; Conference date: 13-11-2017 Through 16-11-2017",

url = "https://ieeexplore.ieee.org/xpl/conhome/8239375/proceeding",

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TY - GEN

T1 - 75 GHz InP DHBT power amplifier based on two-stacked transistors

AU - Squartecchia, Michele

AU - Midili, Virginio

AU - Johansen, Tom Keinicke

AU - Dupuy, Jean-Yves

AU - Nodjiadjim, Virginie

AU - Riet, Muriel

AU - Konczykowska, Agnieszka

PY - 2017

Y1 - 2017

N2 - In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver stage of the power amplifier. Besides the series voltage addition of the stacked structure, parallel power combining techniques were adopted to increase the output power of the MMIC amplifier, with four-way and eight-way corporate power combiners at the driver and power stages, respectively. At 75 GHz, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm.

AB - In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver stage of the power amplifier. Besides the series voltage addition of the stacked structure, parallel power combining techniques were adopted to increase the output power of the MMIC amplifier, with four-way and eight-way corporate power combiners at the driver and power stages, respectively. At 75 GHz, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm.

KW - Power amplifier

KW - Indium phosphide

KW - Power combining

KW - Stacked transistor

KW - Double heterojunction bipolar transistor (DHBT)

U2 - 10.1109/APMC.2017.8251442

DO - 10.1109/APMC.2017.8251442

M3 - Article in proceedings

SP - 314

EP - 317

BT - Proceedings of 2017 Asia Pacific Microwave Conference

PB - IEEE

T2 - 2017 IEEE Asia Pacific Microwave Conference

Y2 - 13 November 2017 through 16 November 2017

ER -

75 GHz InP DHBT power amplifier based on two-stacked transistors

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Conference

Keywords

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