4 Gb/s two-level to 2 symbol/s four-level converter GaAs IC for semiconductor optical amplifier modulators

J. Riishøj, Torben Nørskov Nielsen, Ulrik Bo Gliese, Kristian Stubkjær

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    Abstract

    A design of a 50 Ω impedance matched two-to-four level converter GaAs IC for two-electrode semiconductor optical amplifier modulators is presented. Eye diagrams with good eye openings and 0.33 V spacing between adjacent logic levels are demonstrated for input bit rates up to 4 Gb/s. A novel differential super buffer output driver is applied and output reflection coefficients |S22| of less than -12 dB for frequencies less than 10 GHz are obtained
    Original languageEnglish
    Title of host publicationProceedings of the 15th Annual Gallium Arsenide Integrated Circuit
    PublisherIEEE
    Publication date1993
    Pages299-301
    ISBN (Print)07-80-31393-3
    DOIs
    Publication statusPublished - 1993
    Event15th Annual Gallium Arsenide Integrated Circuit Symposium - San Jose, CA, United States
    Duration: 9 Oct 199312 Oct 1993
    Conference number: 15
    http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3147

    Conference

    Conference15th Annual Gallium Arsenide Integrated Circuit Symposium
    Number15
    Country/TerritoryUnited States
    CitySan Jose, CA
    Period09/10/199312/10/1993
    Internet address

    Bibliographical note

    Copyright: 1993 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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