4 Gb/s two-level to 2 symbol/s four-level converter GaAs IC for semiconductor optical amplifier modulators

J. Riishøj, Torben Nørskov Nielsen, Ulrik Bo Gliese, Kristian Stubkjær

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Abstract

A design of a 50 Ω impedance matched two-to-four level converter GaAs IC for two-electrode semiconductor optical amplifier modulators is presented. Eye diagrams with good eye openings and 0.33 V spacing between adjacent logic levels are demonstrated for input bit rates up to 4 Gb/s. A novel differential super buffer output driver is applied and output reflection coefficients |S22| of less than -12 dB for frequencies less than 10 GHz are obtained
Original languageEnglish
Title of host publicationProceedings of the 15th Annual Gallium Arsenide Integrated Circuit
PublisherIEEE
Publication date1993
Pages299-301
ISBN (Print)07-80-31393-3
DOIs
Publication statusPublished - 1993
Event15th Annual Gallium Arsenide Integrated Circuit Symposium - San Jose, CA, United States
Duration: 9 Oct 199312 Oct 1993
Conference number: 15
http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3147

Conference

Conference15th Annual Gallium Arsenide Integrated Circuit Symposium
Number15
CountryUnited States
CitySan Jose, CA
Period09/10/199312/10/1993
Internet address

Bibliographical note

Copyright: 1993 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

Cite this

Riishøj, J., Nielsen, T. N., Gliese, U. B., & Stubkjær, K. (1993). 4 Gb/s two-level to 2 symbol/s four-level converter GaAs IC for semiconductor optical amplifier modulators. In Proceedings of the 15th Annual Gallium Arsenide Integrated Circuit (pp. 299-301). IEEE. https://doi.org/10.1109/GAAS.1993.394447