3ω correction method for eliminating resistance measurement error due to Joule heating

Benny Guralnik; Ole Hansen; Henrik H. Henrichsen; Braulio Beltrán-Pitarch; Frederik W. Østerberg; Lior Shiv; Thomas A. Marangoni; Andreas R. Stilling-Andersen; Alberto Cagliani; Mikkel F. Hansen; Peter F. Nielsen; Herman Oprins; Bjorn Vermeersch; Christoph Adelmann; Shibesh Dutta; Kasper A. Borup; Besira M. Mihiretie; Dirch H Petersen

doi:10.1063/5.0063998

3ω correction method for eliminating resistance measurement error due to Joule heating

Benny Guralnik^*, Ole Hansen, Henrik H. Henrichsen, Braulio Beltrán-Pitarch, Frederik W. Østerberg, Lior Shiv, Thomas A. Marangoni, Andreas R. Stilling-Andersen, Alberto Cagliani, Mikkel F. Hansen, Peter F. Nielsen, Herman Oprins, Bjorn Vermeersch, Christoph Adelmann, Shibesh Dutta, Kasper A. Borup, Besira M. Mihiretie, Dirch H Petersen

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

107 Downloads (Pure)

Abstract

Electrical four-terminal sensing at (sub-)micrometer scales enables the characterization of key electromagnetic properties within the semiconductor industry, including materials' resistivity, Hall mobility/carrier density, and magnetoresistance. However, as devices' critical dimensions continue to shrink, significant over/underestimation of properties due to a by-product Joule heating of the probed volume becomes increasingly common. Here, we demonstrate how self-heating effects can be quantified and compensated for via 3ω signals to yield zero-current transfer resistance. Under further assumptions, these signals can be used to characterize selected thermal properties of the probed volume, such as the temperature coefficient of resistance and/or the Seebeck coefficient.

Original language	English
Article number	094711
Journal	Review of Scientific Instruments
Volume	92
Issue number	9
Number of pages	6
ISSN	0034-6748
DOIs	https://doi.org/10.1063/5.0063998
Publication status	Published - 2021

Access to Document

10.1063/5.0063998Licence: CC BY

FulltextFinal published version, 4.89 MBLicence: CC BY

OpenUrl availability

Full text

Cite this

Guralnik, B., Hansen, O., Henrichsen, H. H., Beltrán-Pitarch, B., Østerberg, F. W., Shiv, L., Marangoni, T. A., Stilling-Andersen, A. R., Cagliani, A., Hansen, M. F., Nielsen, P. F., Oprins, H., Vermeersch, B., Adelmann, C., Dutta, S., Borup, K. A., Mihiretie, B. M., & Petersen, D. H. (2021). 3ω correction method for eliminating resistance measurement error due to Joule heating. Review of Scientific Instruments, 92(9), Article 094711. https://doi.org/10.1063/5.0063998

@article{840b174295ae4d938d26a3356ff7ab02,

title = "3ω correction method for eliminating resistance measurement error due to Joule heating",

abstract = "Electrical four-terminal sensing at (sub-)micrometer scales enables the characterization of key electromagnetic properties within the semiconductor industry, including materials' resistivity, Hall mobility/carrier density, and magnetoresistance. However, as devices' critical dimensions continue to shrink, significant over/underestimation of properties due to a by-product Joule heating of the probed volume becomes increasingly common. Here, we demonstrate how self-heating effects can be quantified and compensated for via 3ω signals to yield zero-current transfer resistance. Under further assumptions, these signals can be used to characterize selected thermal properties of the probed volume, such as the temperature coefficient of resistance and/or the Seebeck coefficient.",

author = "Benny Guralnik and Ole Hansen and Henrichsen, {Henrik H.} and Braulio Beltr{\'a}n-Pitarch and {\O}sterberg, {Frederik W.} and Lior Shiv and Marangoni, {Thomas A.} and Stilling-Andersen, {Andreas R.} and Alberto Cagliani and Hansen, {Mikkel F.} and Nielsen, {Peter F.} and Herman Oprins and Bjorn Vermeersch and Christoph Adelmann and Shibesh Dutta and Borup, {Kasper A.} and Mihiretie, {Besira M.} and Petersen, {Dirch H}",

year = "2021",

doi = "10.1063/5.0063998",

language = "English",

volume = "92",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "American Institute of Physics",

number = "9",

}

Guralnik, B, Hansen, O, Henrichsen, HH, Beltrán-Pitarch, B, Østerberg, FW, Shiv, L, Marangoni, TA, Stilling-Andersen, AR, Cagliani, A, Hansen, MF, Nielsen, PF, Oprins, H, Vermeersch, B, Adelmann, C, Dutta, S, Borup, KA, Mihiretie, BM & Petersen, DH 2021, '3ω correction method for eliminating resistance measurement error due to Joule heating', Review of Scientific Instruments, vol. 92, no. 9, 094711. https://doi.org/10.1063/5.0063998

TY - JOUR

T1 - 3ω correction method for eliminating resistance measurement error due to Joule heating

AU - Guralnik, Benny

AU - Hansen, Ole

AU - Henrichsen, Henrik H.

AU - Beltrán-Pitarch, Braulio

AU - Østerberg, Frederik W.

AU - Shiv, Lior

AU - Marangoni, Thomas A.

AU - Stilling-Andersen, Andreas R.

AU - Cagliani, Alberto

AU - Hansen, Mikkel F.

AU - Nielsen, Peter F.

AU - Oprins, Herman

AU - Vermeersch, Bjorn

AU - Adelmann, Christoph

AU - Dutta, Shibesh

AU - Borup, Kasper A.

AU - Mihiretie, Besira M.

AU - Petersen, Dirch H

PY - 2021

Y1 - 2021

N2 - Electrical four-terminal sensing at (sub-)micrometer scales enables the characterization of key electromagnetic properties within the semiconductor industry, including materials' resistivity, Hall mobility/carrier density, and magnetoresistance. However, as devices' critical dimensions continue to shrink, significant over/underestimation of properties due to a by-product Joule heating of the probed volume becomes increasingly common. Here, we demonstrate how self-heating effects can be quantified and compensated for via 3ω signals to yield zero-current transfer resistance. Under further assumptions, these signals can be used to characterize selected thermal properties of the probed volume, such as the temperature coefficient of resistance and/or the Seebeck coefficient.

AB - Electrical four-terminal sensing at (sub-)micrometer scales enables the characterization of key electromagnetic properties within the semiconductor industry, including materials' resistivity, Hall mobility/carrier density, and magnetoresistance. However, as devices' critical dimensions continue to shrink, significant over/underestimation of properties due to a by-product Joule heating of the probed volume becomes increasingly common. Here, we demonstrate how self-heating effects can be quantified and compensated for via 3ω signals to yield zero-current transfer resistance. Under further assumptions, these signals can be used to characterize selected thermal properties of the probed volume, such as the temperature coefficient of resistance and/or the Seebeck coefficient.

U2 - 10.1063/5.0063998

DO - 10.1063/5.0063998

M3 - Journal article

C2 - 34598479

SN - 0034-6748

VL - 92

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 9

M1 - 094711

ER -

3ω correction method for eliminating resistance measurement error due to Joule heating

Abstract

Access to Document

OpenUrl availability

Fingerprint

Cite this