3ω correction method for eliminating resistance measurement error due to Joule heating

Benny Guralnik*, Ole Hansen, Henrik H. Henrichsen, Braulio Beltrán-Pitarch, Frederik W. Østerberg, Lior Shiv, Thomas A. Marangoni, Andreas R. Stilling-Andersen, Alberto Cagliani, Mikkel F. Hansen, Peter F. Nielsen, Herman Oprins, Bjorn Vermeersch, Christoph Adelmann, Shibesh Dutta, Kasper A. Borup, Besira M. Mihiretie, Dirch H Petersen

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

2 Downloads (Pure)

Abstract

Electrical four-terminal sensing at (sub-)micrometer scales enables the characterization of key electromagnetic properties within the semiconductor industry, including materials' resistivity, Hall mobility/carrier density, and magnetoresistance. However, as devices' critical dimensions continue to shrink, significant over/underestimation of properties due to a by-product Joule heating of the probed volume becomes increasingly common. Here, we demonstrate how self-heating effects can be quantified and compensated for via 3ω signals to yield zero-current transfer resistance. Under further assumptions, these signals can be used to characterize selected thermal properties of the probed volume, such as the temperature coefficient of resistance and/or the Seebeck coefficient.
Original languageEnglish
Article number094711
JournalReview of Scientific Instruments
Volume92
Issue number9
Number of pages6
ISSN0034-6748
DOIs
Publication statusPublished - 2021

Fingerprint

Dive into the research topics of '3ω correction method for eliminating resistance measurement error due to Joule heating'. Together they form a unique fingerprint.

Cite this