2.5 Gb/s laser-driver GaAS IC

Jesper Riishøj

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A laser-diode driver GaAs IC incorporating an optional NRZ/RZ (non-return-to-zero/return-to-zero) conversion facility, having ECL (emitter-coupled logic) and SCFL (source-coupled FET logic)-compatible inputs and providing a 0-60-mA adjustable output current into a 50-Ω/5-V termination at bit rates up to 2 Gb/s NRZ and maintaining a clear eye opening of 50 mA at 2.5 Gb/s NRZ bit rate has been designed, using a commercial 1-μm gate-length (Fτ=12 GHz) GaAs MESFET foundry service. The high maximum output current is obtained by implementing the output driver as a cascode differential amplifier. The logic circuitry implemented using a novel, DCAL (diode-clamped active-load) SCFL family, which is based on gate-width scaling rather than on absolute values, so that the on-chip logic voltage swing is less sensitive to process variations than conventional SCFL. A 60% improvement in noise margin is also obtained. To verify laser driving performance a back-to-back optical-fiber transmission experiment was performed, giving good optical eye diagrams at 2.5 Gb/s. The electrooptical interplay between laser-diode driver and laser-diode has been demonstrated using SPICE simulations
Original languageEnglish
JournalJournal of Lightwave Technology
Issue number7
Pages (from-to)1139-1146
Publication statusPublished - 1993

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