1/f Noise Characterization in CMOS Transistors in 0.13μm Technology

J. Citakovic, L J Stenberg, Pietro Andreani

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Abstract

Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13μm technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density Nt, the Hooge parameter αH and the Coulomb scattering parameter αs have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model.
Original languageEnglish
Title of host publication24th Norchip Conference, 2006.
PublisherIEEE
Publication date2006
Pages81-84
ISBN (Print)1-4244-0772-9
DOIs
Publication statusPublished - 2006
Event24th Norchip Conference - Linköping, Sweden
Duration: 20 Nov 200621 Nov 2006
Conference number: 24

Conference

Conference24th Norchip Conference
Number24
CountrySweden
CityLinköping
Period20/11/200621/11/2006

Bibliographical note

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Cite this

Citakovic, J., Stenberg, L. J., & Andreani, P. (2006). 1/f Noise Characterization in CMOS Transistors in 0.13μm Technology. In 24th Norchip Conference, 2006. (pp. 81-84). IEEE. https://doi.org/10.1109/NORCHP.2006.329249