1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

Anders Kragh Hansen; Mathias Christensen; Danny Noordegraaf; M. Heisterberg; E Papastathopoulos; V Loyo-Maldonado; Ole Bjarlin Jensen; M. L.  Stock; P. M. W. Skovgaard

doi:10.1117/12.2251964

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

Anders Kragh Hansen, Mathias Christensen, Danny Noordegraaf, M. Heisterberg, E Papastathopoulos, V Loyo-Maldonado, Ole Bjarlin Jensen, M. L. Stock, P. M. W. Skovgaard

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm.
We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications. © (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE

Original language	English
Title of host publication	Proceedings of SPIE
Number of pages	6
Volume	10088
Publisher	SPIE - International Society for Optical Engineering
Publication date	2017
Article number	1008802
DOIs	https://doi.org/10.1117/12.2251964
Publication status	Published - 2017
Event	SPIE Photonics West LASE 2017: SPIE Conference 10088 - The Moscone Center, San Francisco, United States Duration: 28 Jan 2017 → 2 Feb 2017

Conference

Conference	SPIE Photonics West LASE 2017
Location	The Moscone Center
Country/Territory	United States
City	San Francisco
Period	28/01/2017 → 02/02/2017

Series	Proceedings of SPIE - The International Society for Optical Engineering
ISSN	0277-786X

Bibliographical note

Copyright 2017 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Keywords

Nonlinear Optics
Second Harmonic Generation
Diffraction-Limited Light
Semiconductor Lasers
Tapered Diode Lasers
Yellow Lasers

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Hansen, A. K., Christensen, M., Noordegraaf, D., Heisterberg, M., Papastathopoulos, E., Loyo-Maldonado, V., Jensen, O. B., Stock, M. L., & Skovgaard, P. M. W. (2017). 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system. In Proceedings of SPIE (Vol. 10088). Article 1008802 SPIE - International Society for Optical Engineering. https://doi.org/10.1117/12.2251964

@inproceedings{d99c1c8184c740339cc5113d9c98b46b,

title = "1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system",

abstract = "Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm.We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications. {\textcopyright} (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE",

keywords = "Nonlinear Optics, Second Harmonic Generation, Diffraction-Limited Light, Semiconductor Lasers, Tapered Diode Lasers, Yellow Lasers",

author = "Hansen, {Anders Kragh} and Mathias Christensen and Danny Noordegraaf and M. Heisterberg and E Papastathopoulos and V Loyo-Maldonado and Jensen, {Ole Bjarlin} and Stock, {M. L.} and Skovgaard, {P. M. W.}",

note = "Copyright 2017 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.; SPIE Photonics West LASE 2017 : SPIE Conference 10088 ; Conference date: 28-01-2017 Through 02-02-2017",

year = "2017",

doi = "10.1117/12.2251964",

language = "English",

volume = "10088",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE - International Society for Optical Engineering",

booktitle = "Proceedings of SPIE",

}

Hansen, AK, Christensen, M, Noordegraaf, D, Heisterberg, M, Papastathopoulos, E, Loyo-Maldonado, V, Jensen, OB, Stock, ML & Skovgaard, PMW 2017, 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system. in Proceedings of SPIE. vol. 10088, 1008802, SPIE - International Society for Optical Engineering, Proceedings of SPIE - The International Society for Optical Engineering, SPIE Photonics West LASE 2017, San Francisco, California, United States, 28/01/2017. https://doi.org/10.1117/12.2251964

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system. / Hansen, Anders Kragh; Christensen, Mathias; Noordegraaf, Danny et al.
Proceedings of SPIE. Vol. 10088 SPIE - International Society for Optical Engineering, 2017. 1008802 (Proceedings of SPIE - The International Society for Optical Engineering).

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

AU - Hansen, Anders Kragh

AU - Christensen, Mathias

AU - Noordegraaf, Danny

AU - Heisterberg, M.

AU - Papastathopoulos, E

AU - Loyo-Maldonado, V

AU - Jensen, Ole Bjarlin

AU - Stock, M. L.

AU - Skovgaard, P. M. W.

N1 - Copyright 2017 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

PY - 2017

Y1 - 2017

N2 - Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm.We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications. © (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE

AB - Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm.We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications. © (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE

KW - Nonlinear Optics

KW - Second Harmonic Generation

KW - Diffraction-Limited Light

KW - Semiconductor Lasers

KW - Tapered Diode Lasers

KW - Yellow Lasers

U2 - 10.1117/12.2251964

DO - 10.1117/12.2251964

M3 - Article in proceedings

VL - 10088

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Proceedings of SPIE

PB - SPIE - International Society for Optical Engineering

T2 - SPIE Photonics West LASE 2017

Y2 - 28 January 2017 through 2 February 2017

ER -

Hansen AK, Christensen M, Noordegraaf D, Heisterberg M, Papastathopoulos E, Loyo-Maldonado V et al. 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system. In Proceedings of SPIE. Vol. 10088. SPIE - International Society for Optical Engineering. 2017. 1008802. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2251964

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

Abstract

Conference

Bibliographical note

Keywords

UN SDGs

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