1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

Anders Kragh Hansen, Mathias Christensen, Danny Noordegraaf, M. Heisterberg, E Papastathopoulos, V Loyo-Maldonado, Ole Bjarlin Jensen, M. L. Stock, P. M. W. Skovgaard

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Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm.
We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications. © (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE
Original languageEnglish
Title of host publicationProceedings of SPIE
Number of pages6
PublisherSPIE - International Society for Optical Engineering
Publication date2017
Article number1008802
Publication statusPublished - 2017
EventNonlinear Frequency Generation and Conversion: Materials and Devices XVI: SPIE Conference 10088 - The Moscone Center, San Francisco, United States
Duration: 28 Jan 20172 Feb 2017
Conference number: 10088


ConferenceNonlinear Frequency Generation and Conversion: Materials and Devices XVI
LocationThe Moscone Center
Country/TerritoryUnited States
CitySan Francisco
SeriesProceedings of SPIE, the International Society for Optical Engineering

Bibliographical note

Copyright 2017 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.


  • Nonlinear Optics
  • Second Harmonic Generation
  • Diffraction-Limited Light
  • Semiconductor Lasers
  • Tapered Diode Lasers
  • Yellow Lasers


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