16×10 Gb/s WDM bidirectional gating in a semiconductor optical amplifier for optical cross connects exploiting network connection symmetry

Jianjun Yu, Alvaro Juan Buxens Azcoaga, Anders Clausen, Palle Jeppesen

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

In order to further reduce the number of gating elements in space switches, the performance of 10 Gb/s wavelength division multiplexing (WDM) bidirectional semiconductor optical amplifier (SOA) gating is investigated, We demonstrate for the first time that a conventional SOA can be used for bidirectional WDM gating operation at 10 Gb/s by the use of holding light injection
Original languageEnglish
JournalI E E E Photonics Technology Letters
Volume12
Issue number6
Pages (from-to)702-704
ISSN1041-1135
DOIs
Publication statusPublished - 2000

Bibliographical note

Copyright: 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

Cite this

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title = "16×10 Gb/s WDM bidirectional gating in a semiconductor optical amplifier for optical cross connects exploiting network connection symmetry",
abstract = "In order to further reduce the number of gating elements in space switches, the performance of 10 Gb/s wavelength division multiplexing (WDM) bidirectional semiconductor optical amplifier (SOA) gating is investigated, We demonstrate for the first time that a conventional SOA can be used for bidirectional WDM gating operation at 10 Gb/s by the use of holding light injection",
author = "Jianjun Yu and {Buxens Azcoaga}, {Alvaro Juan} and Anders Clausen and Palle Jeppesen",
note = "Copyright: 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE",
year = "2000",
doi = "10.1109/68.849090",
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volume = "12",
pages = "702--704",
journal = "I E E E Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers",
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16×10 Gb/s WDM bidirectional gating in a semiconductor optical amplifier for optical cross connects exploiting network connection symmetry. / Yu, Jianjun; Buxens Azcoaga, Alvaro Juan; Clausen, Anders; Jeppesen, Palle.

In: I E E E Photonics Technology Letters, Vol. 12, No. 6, 2000, p. 702-704.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - 16×10 Gb/s WDM bidirectional gating in a semiconductor optical amplifier for optical cross connects exploiting network connection symmetry

AU - Yu, Jianjun

AU - Buxens Azcoaga, Alvaro Juan

AU - Clausen, Anders

AU - Jeppesen, Palle

N1 - Copyright: 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 2000

Y1 - 2000

N2 - In order to further reduce the number of gating elements in space switches, the performance of 10 Gb/s wavelength division multiplexing (WDM) bidirectional semiconductor optical amplifier (SOA) gating is investigated, We demonstrate for the first time that a conventional SOA can be used for bidirectional WDM gating operation at 10 Gb/s by the use of holding light injection

AB - In order to further reduce the number of gating elements in space switches, the performance of 10 Gb/s wavelength division multiplexing (WDM) bidirectional semiconductor optical amplifier (SOA) gating is investigated, We demonstrate for the first time that a conventional SOA can be used for bidirectional WDM gating operation at 10 Gb/s by the use of holding light injection

U2 - 10.1109/68.849090

DO - 10.1109/68.849090

M3 - Journal article

VL - 12

SP - 702

EP - 704

JO - I E E E Photonics Technology Letters

JF - I E E E Photonics Technology Letters

SN - 1041-1135

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