1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability

F. I. Zubov, S. P. Gladii, Yu M. Shernyakov, M. V. Maximov, Elizaveta Semenova, I. V. Kulkova, Kresten Yvind, A. E. Zhukov

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Abstract

Temperature characteristics of InAs/InGaAsP quantum dot (QD) lasers synthesized on InP (001) substrate are presented. The lasers demonstrate high temperature stability: a threshold current characteristic temperature as high as 205 K in the temperature range between 20 to 50°C was measured. Lasing wavelength of 1.5 μm was achieved by covering QDs with 1.7 monolayers of GaAs.
Original languageEnglish
Book seriesJournal of Physics: Conference Series (Online)
Volume741
Number of pages4
ISSN1742-6596
DOIs
Publication statusPublished - 2016
Event3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures - St. Petersburg Academic University, St. Petersburg, Russian Federation
Duration: 28 Mar 201630 Mar 2016

Conference

Conference3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures
LocationSt. Petersburg Academic University
CountryRussian Federation
CitySt. Petersburg
Period28/03/201630/03/2016

Bibliographical note

Content from this work may be used under the terms of theCreative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. Published under licence by IOP Publishing Ltd

Keywords

  • Lasing action in semiconductors
  • Design of specific laser systems
  • Semiconductor lasers
  • gallium arsenide
  • III-V semiconductors
  • indium compounds
  • monolayers
  • quantum dot lasers
  • semiconductor quantum dots
  • InAs-InGaAsP-InP quantum dot laser
  • temperature stability
  • InP (001) substrate
  • threshold current
  • lasing wavelength
  • GaAs monolayers
  • temperature 205 K
  • temperature 20 degC to 50 degC
  • wavelength 1.5 mum
  • InAs−InGaAs−InP

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