1.38 W tunable high-power narrow-linewidth external-cavity tapered amplifier at 670 nm

Mingjun Chi; G. Erbert; B. Sumpf; Paul Michael Petersen

1.38 W tunable high-power narrow-linewidth external-cavity tapered amplifier at 670 nm

Mingjun Chi, G. Erbert, B. Sumpf, Paul Michael Petersen

Ferdinand-Braun-Institut

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

A diffraction-limited narrow-linewidth diode laser system based on a tapered amplifier in external cavity is demonstrated. 1.38 W output power is obtained. The laser system is tunable from 659 to 675 nm.

Original language	English
Title of host publication	2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS)
Publisher	IEEE
Publication date	2010
Pages	1-2
ISBN (Print)	978-1-55752-889-6
Publication status	Published - 2010
Event	Conference on Lasers and Electro‐Optics (CLEO)/International Quantum Electronics Conference (IQEC) - San Jose, CA, United States Duration: 16 May 2010 → 21 May 2010 http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=17189

Conference

Conference	Conference on Lasers and Electro‐Optics (CLEO)/International Quantum Electronics Conference (IQEC)
Country/Territory	United States
City	San Jose, CA
Period	16/05/2010 → 21/05/2010
Internet address	http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=17189

Bibliographical note

Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Keywords

semiconductor lasers
laser amplifier

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@inproceedings{9d19738fd56146af97953182fb9adfaa,

title = "1.38 W tunable high-power narrow-linewidth external-cavity tapered amplifier at 670 nm",

abstract = "A diffraction-limited narrow-linewidth diode laser system based on a tapered amplifier in external cavity is demonstrated. 1.38 W output power is obtained. The laser system is tunable from 659 to 675 nm.",

keywords = "semiconductor lasers, laser amplifier",

author = "Mingjun Chi and G. Erbert and B. Sumpf and Petersen, \{Paul Michael\}",

note = "Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.; Conference on Lasers and Electro‐Optics (CLEO)/International Quantum Electronics Conference (IQEC), CLEO/QELS 2010 ; Conference date: 16-05-2010 Through 21-05-2010",

year = "2010",

language = "English",

isbn = "978-1-55752-889-6",

pages = "1--2",

booktitle = "2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS)",

publisher = "IEEE",

address = "United States",

url = "http://www.ieee.org/conferences\_events/conferences/conferencedetails/index.html?Conf\_ID=17189",

}

Chi, M, Erbert, G, Sumpf, B & Petersen, PM 2010, 1.38 W tunable high-power narrow-linewidth external-cavity tapered amplifier at 670 nm. in 2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS). IEEE, pp. 1-2, Conference on Lasers and Electro‐Optics (CLEO)/International Quantum Electronics Conference (IQEC), San Jose, CA, United States, 16/05/2010. <http://www.cleoconference.org/>

1.38 W tunable high-power narrow-linewidth external-cavity tapered amplifier at 670 nm. / Chi, Mingjun; Erbert, G.; Sumpf, B. et al.
2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS). IEEE, 2010. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - 1.38 W tunable high-power narrow-linewidth external-cavity tapered amplifier at 670 nm

AU - Chi, Mingjun

AU - Erbert, G.

AU - Sumpf, B.

AU - Petersen, Paul Michael

N1 - Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

PY - 2010

Y1 - 2010

N2 - A diffraction-limited narrow-linewidth diode laser system based on a tapered amplifier in external cavity is demonstrated. 1.38 W output power is obtained. The laser system is tunable from 659 to 675 nm.

AB - A diffraction-limited narrow-linewidth diode laser system based on a tapered amplifier in external cavity is demonstrated. 1.38 W output power is obtained. The laser system is tunable from 659 to 675 nm.

KW - semiconductor lasers

KW - laser amplifier

M3 - Article in proceedings

SN - 978-1-55752-889-6

SP - 1

EP - 2

BT - 2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS)

PB - IEEE

T2 - Conference on Lasers and Electro‐Optics (CLEO)/International Quantum Electronics Conference (IQEC)

Y2 - 16 May 2010 through 21 May 2010

ER -

1.38 W tunable high-power narrow-linewidth external-cavity tapered amplifier at 670 nm

Abstract

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Keywords

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