1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

Research output: Contribution to journalJournal article – Annual report year: 2017Researchpeer-review

  • Author: Wu, Xiaoyan

    CAS - Shanghai Institute of Microsystem and Information Technology, China

  • Author: Pan, Wenwu

    CAS - Shanghai Institute of Microsystem and Information Technology, China

  • Author: Zhang, Zhenpu

    CAS - Shanghai Institute of Microsystem and Information Technology, China

  • Author: Li, Yaoyao

    CAS - Shanghai Institute of Microsystem and Information Technology, China

  • Author: Cao, Chunfang

    CAS - Shanghai Institute of Microsystem and Information Technology, China

  • Author: Liu, Juanjuan

    CAS - Shanghai Institute of Microsystem and Information Technology, China

  • Author: Zhang, Liyao

    CAS - Shanghai Institute of Microsystem and Information Technology, China

  • Author: Song, Yuxin

    CAS - Shanghai Institute of Microsystem and Information Technology, China

  • Author: Ou, Haiyan

    Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark, Ørsteds Plads, 2800, Kgs. Lyngby, Denmark

  • Author: Wang, Shumin

    CAS - Shanghai Institute of Microsystem and Information Technology, China

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As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.
Original languageEnglish
JournalA C S Photonics
Volume4
Issue number6
Pages (from-to)1322-1326
ISSN2330-4022
DOIs
Publication statusPublished - 2017
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • GaAsBi, Molecular beam epitaxy, Laser diodes, Quantum well, Uncooled laser

ID: 134034461