1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

Xiaoyan Wu, Wenwu Pan, Zhenpu Zhang, Yaoyao Li, Chunfang Cao, Juanjuan Liu, Liyao Zhang, Yuxin Song, Haiyan Ou, Shumin Wang

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.
Original languageEnglish
JournalA C S Photonics
Volume4
Issue number6
Pages (from-to)1322-1326
ISSN2330-4022
DOIs
Publication statusPublished - 2017

Keywords

  • GaAsBi
  • Molecular beam epitaxy
  • Laser diodes
  • Quantum well
  • Uncooled laser

Cite this

Wu, X., Pan, W., Zhang, Z., Li, Y., Cao, C., Liu, J., Zhang, L., Song, Y., Ou, H., & Wang, S. (2017). 1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy. A C S Photonics, 4(6), 1322-1326. https://doi.org/10.1021/acsphotonics.7b00240