1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

Xiaoyan Wu; Wenwu Pan; Zhenpu Zhang; Yaoyao Li; Chunfang Cao; Juanjuan Liu; Liyao Zhang; Yuxin Song; Haiyan Ou; Shumin Wang

doi:10.1021/acsphotonics.7b00240

1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

Xiaoyan Wu, Wenwu Pan, Zhenpu Zhang, Yaoyao Li, Chunfang Cao, Juanjuan Liu, Liyao Zhang, Yuxin Song, Haiyan Ou, Shumin Wang

CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.

Original language	English
Journal	A C S Photonics
Volume	4
Issue number	6
Pages (from-to)	1322-1326
ISSN	2330-4022
DOIs	https://doi.org/10.1021/acsphotonics.7b00240
Publication status	Published - 2017

Keywords

GaAsBi
Molecular beam epitaxy
Laser diodes
Quantum well
Uncooled laser

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10.1021/acsphotonics.7b00240

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title = "1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy",

abstract = "As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.",

keywords = "GaAsBi, Molecular beam epitaxy, Laser diodes, Quantum well, Uncooled laser",

author = "Xiaoyan Wu and Wenwu Pan and Zhenpu Zhang and Yaoyao Li and Chunfang Cao and Juanjuan Liu and Liyao Zhang and Yuxin Song and Haiyan Ou and Shumin Wang",

year = "2017",

doi = "10.1021/acsphotonics.7b00240",

language = "English",

volume = "4",

pages = "1322--1326",

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TY - JOUR

T1 - 1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

AU - Wu, Xiaoyan

AU - Pan, Wenwu

AU - Zhang, Zhenpu

AU - Li, Yaoyao

AU - Cao, Chunfang

AU - Liu, Juanjuan

AU - Zhang, Liyao

AU - Song, Yuxin

AU - Ou, Haiyan

AU - Wang, Shumin

PY - 2017

Y1 - 2017

N2 - As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.

AB - As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.

KW - GaAsBi

KW - Molecular beam epitaxy

KW - Laser diodes

KW - Quantum well

KW - Uncooled laser

U2 - 10.1021/acsphotonics.7b00240

DO - 10.1021/acsphotonics.7b00240

M3 - Journal article

SN - 2330-4022

VL - 4

SP - 1322

EP - 1326

JO - A C S Photonics

JF - A C S Photonics

IS - 6

ER -

1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

Abstract

Keywords

UN SDGs

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