(110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T-shaped quantum wires

Hannes Gislason, Claus Birger Sørensen, Jørn Märcher Hvam

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    Abstract

    High control of (110) oriented GaAs/Al0.3Ga0.7As quantum wells is very important for the growth of optimized T-shaped GaAs/AlGaAs quantum wires, We investigate theoretically and experimentally 20-200 Angstrom wide (110) oriented GaAs quantum wells grown on (110) oriented substrates and cleaved edges. Photoluminescence transition energies are found to be in good agreement with theory for all well widths. The mean well width is controllable to 1 monolayer accuracy and an effective well width fluctuation of 3.7 Angstrom is derived from the photoluminescence linewidths. The growth rate calibration of the aluminum content of the barrier material agrees within 1% with an estimate from the bound exciton emission of (110) Al0.3Ga0.7As epilayers. (C) 1996 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume69
    Issue number6
    Pages (from-to)800-802
    ISSN0003-6951
    DOIs
    Publication statusPublished - 1996

    Bibliographical note

    Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • GAAS
    • ALXGA1-XAS

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