100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors

Hongtao Chen, Michael Galili, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, S. Balakrishnan, P. Absil, Leif Katsuo Oxenløwe, J. Van Campenhout, G. Roelkens

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Abstract

We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 μm long devices is compared. The responsivity of the devices is 0.74 and 0.92 A/W at 1550 nm, respectively.
Original languageEnglish
JournalJournal of Lightwave Technology
Volume35
Issue number4
Pages (from-to)722-726
ISSN0733-8724
DOIs
Publication statusPublished - 2017

Keywords

  • Optical waveguides
  • Bandwidth
  • Silicon
  • PIN photodiodes
  • Optical pulses
  • Radio frequency
  • photodetectors
  • Germanium
  • integrated optoelectronics
  • optical communications

Cite this

Chen, H., Galili, M., Verheyen, P., De Heyn, P., Lepage, G., De Coster, J., Balakrishnan, S., Absil, P., Oxenløwe, L. K., Van Campenhout, J., & Roelkens, G. (2017). 100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors. Journal of Lightwave Technology, 35(4), 722-726. https://doi.org/10.1109/JLT.2016.2593942