100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors

Hongtao Chen; Michael Galili; P. Verheyen; P. De Heyn; G. Lepage; J. De Coster; S. Balakrishnan; P. Absil; Leif Katsuo Oxenløwe; J. Van Campenhout; G. Roelkens

doi:10.1109/JLT.2016.2593942

100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors

Hongtao Chen, Michael Galili, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, S. Balakrishnan, P. Absil, Leif Katsuo Oxenløwe, J. Van Campenhout, G. Roelkens

Centre of Excellence for Silicon Photonics for Optical Communications

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Abstract

We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 μm long devices is compared. The responsivity of the devices is 0.74 and 0.92 A/W at 1550 nm, respectively.

Original language	English
Journal	Journal of Lightwave Technology
Volume	35
Issue number	4
Pages (from-to)	722-726
ISSN	0733-8724
DOIs	https://doi.org/10.1109/JLT.2016.2593942
Publication status	Published - 2017

Keywords

Optical waveguides
Bandwidth
Silicon
PIN photodiodes
Optical pulses
Radio frequency
photodetectors
Germanium
integrated optoelectronics
optical communications

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10.1109/JLT.2016.2593942

100 Gbps RZ DataAccepted author manuscript, 610 KB

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title = "100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors",

abstract = "We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 μm long devices is compared. The responsivity of the devices is 0.74 and 0.92 A/W at 1550 nm, respectively.",

keywords = "Optical waveguides, Bandwidth, Silicon, PIN photodiodes, Optical pulses, Radio frequency, photodetectors, Germanium, integrated optoelectronics, optical communications",

author = "Hongtao Chen and Michael Galili and P. Verheyen and {De Heyn}, P. and G. Lepage and {De Coster}, J. and S. Balakrishnan and P. Absil and Oxenl{\o}we, {Leif Katsuo} and {Van Campenhout}, J. and G. Roelkens",

year = "2017",

doi = "10.1109/JLT.2016.2593942",

language = "English",

volume = "35",

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journal = "Journal of Lightwave Technology",

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T1 - 100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors

AU - Chen, Hongtao

AU - Galili, Michael

AU - Verheyen, P.

AU - De Heyn, P.

AU - Lepage, G.

AU - De Coster, J.

AU - Balakrishnan, S.

AU - Absil, P.

AU - Oxenløwe, Leif Katsuo

AU - Van Campenhout, J.

AU - Roelkens, G.

PY - 2017

Y1 - 2017

N2 - We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 μm long devices is compared. The responsivity of the devices is 0.74 and 0.92 A/W at 1550 nm, respectively.

AB - We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 μm long devices is compared. The responsivity of the devices is 0.74 and 0.92 A/W at 1550 nm, respectively.

KW - Optical waveguides

KW - Bandwidth

KW - Silicon

KW - PIN photodiodes

KW - Optical pulses

KW - Radio frequency

KW - photodetectors

KW - Germanium

KW - integrated optoelectronics

KW - optical communications

U2 - 10.1109/JLT.2016.2593942

DO - 10.1109/JLT.2016.2593942

M3 - Journal article

SN - 0733-8724

VL - 35

SP - 722

EP - 726

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

IS - 4

ER -

100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors

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Keywords

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