Abstract
This paper reports the fabrication and the characterisation of a 10 GHz two-section passively mode-locked quantum dash laser emitting at 1.59 μm. The potential of the device's mode-locking is investigated through an analytical model taking into account both the material parameters and the laser geometry. Results show that the combination of a small absorbing section coupled to a high absorption coefficient can lead to an efficient mode-locking. Characterisation shows mode-locking operation though output pulses are found to be strongly chirped. Noise measurements demonstrate that the single side band phase noise does not exceed -80 dBc/Hz at 100 kHz offset leading to an average timing jitter as low as 800 fs. As compared to single QW lasers these results constitute a significant improvement and are of first importance for applications in optical telecommunications.
Original language | English |
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Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 7720 |
Pages (from-to) | 77201A |
ISSN | 0277-786X |
DOIs | |
Publication status | Published - 2010 |
Event | Semiconductor Lasers and Laser Dynamics - Brussels, Belgium Duration: 1 Jan 2010 → … Conference number: 4 |
Conference
Conference | Semiconductor Lasers and Laser Dynamics |
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Number | 4 |
City | Brussels, Belgium |
Period | 01/01/2010 → … |
Keywords
- Mode-locking
- Ultra-fast lasers
- Quantum dots/dashes