10 Gb/s-NRZ Optical 2R-regeneration in two-section SOA-EA chip

Tania Vivero, Nicola Calabretta, Idelfonso Tafur Monroy, G.C. Kassar, Filip Öhman, Kresten Yvind, A. Gonzales-Marco, Jesper Mørk

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Abstract

All optical 2R-regeneration based on the integration of semiconductor optical amplifiers and electroabsorbers in a single waveguide is experimentally demonstrated. Static transfer functions of concatenated structures show strong improvements of the nonlinearity. An extinction ratio improvement > 4.5 dB has been obtained under dynamics operation. For optical signal- to-noise ratio values above 17 dB, improvement in BER is observed. A receiver sensitivity improvement > 2 dB at BER of 10-9 was found for 10 Gb/s operation.
Original languageEnglish
Title of host publicationThe 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2007. LEOS 2007.
PublisherIEEE
Publication date2007
PagesThP2
ISBN (Print)978-1-4244-0925-9
DOIs
Publication statusPublished - 2007
Event20th Annaul Meeting of the IEEE Lasers and Electro-Optics Society - Lake Buena Vista, FL, United States
Duration: 21 Oct 200725 Oct 2007
http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=4382236

Conference

Conference20th Annaul Meeting of the IEEE Lasers and Electro-Optics Society
CountryUnited States
CityLake Buena Vista, FL
Period21/10/200725/10/2007
Internet address

Bibliographical note

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