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Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP. / Zubov, F.I. ; Semenova, Elizaveta; Kulkova, Irina; Yvind, Kresten; Kryzhanovskaya, N.V. ; Maximov, M.V. ; Zhukov, A.E. .

In: Technical Physics, Vol. 51, No. 10, 2017, p. 1382-1386.

Research output: Contribution to journalJournal article – Annual report year: 2017Researchpeer-review

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@article{39f4b2e9de0a40f5a85cb2e8d57af083,
title = "Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP",
abstract = "We report on high temperature stability of a near-1.5 µm laser synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer were used as an active region of the laser. An InGaAsP quaternary alloy having the bandgap energy of 1.15 eV was utilized as a waveguiding/matrix layer. A high characteristic temperature of the threshold current of T0 = 205 K, evaluated in the temperature range of 20−50◦C, was achieved in ridge waveguide laser diodes. A correlation of T0 values with the bandgap energy of the waveguiding layer was found.",
author = "F.I. Zubov and Elizaveta Semenova and Irina Kulkova and Kresten Yvind and N.V. Kryzhanovskaya and M.V. Maximov and A.E. Zhukov",
year = "2017",
doi = "10.21883/FTP.2017.10.45017.8590",
language = "Russisk",
volume = "51",
pages = "1382--1386",
journal = "Technical Physics",
issn = "1063-7842",
publisher = "M A I K Nauka - Interperiodica",
number = "10",

}

RIS

TY - JOUR

T1 - Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP

AU - Zubov, F.I.

AU - Semenova, Elizaveta

AU - Kulkova, Irina

AU - Yvind, Kresten

AU - Kryzhanovskaya, N.V.

AU - Maximov, M.V.

AU - Zhukov, A.E.

PY - 2017

Y1 - 2017

N2 - We report on high temperature stability of a near-1.5 µm laser synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer were used as an active region of the laser. An InGaAsP quaternary alloy having the bandgap energy of 1.15 eV was utilized as a waveguiding/matrix layer. A high characteristic temperature of the threshold current of T0 = 205 K, evaluated in the temperature range of 20−50◦C, was achieved in ridge waveguide laser diodes. A correlation of T0 values with the bandgap energy of the waveguiding layer was found.

AB - We report on high temperature stability of a near-1.5 µm laser synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer were used as an active region of the laser. An InGaAsP quaternary alloy having the bandgap energy of 1.15 eV was utilized as a waveguiding/matrix layer. A high characteristic temperature of the threshold current of T0 = 205 K, evaluated in the temperature range of 20−50◦C, was achieved in ridge waveguide laser diodes. A correlation of T0 values with the bandgap energy of the waveguiding layer was found.

U2 - 10.21883/FTP.2017.10.45017.8590

DO - 10.21883/FTP.2017.10.45017.8590

M3 - Tidsskriftartikel

VL - 51

SP - 1382

EP - 1386

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 10

ER -