计及热电耦合效应的SiC MOSFET阈值电压精确监测方法

Mingxing Du; Jinlei Xin; Wanrong Yao; Ziwei Ouyang

doi:10.19912/j.0254-0096.tynxb.2021-1124

计及热电耦合效应的SiC MOSFET阈值电压精确监测方法

Translated title of the contribution: ACCURATE MONITORING METHOD OF SiC MOSFET THRESHOLD VOLTAGE CONSIDERING THERMOELECTRIC COUPLING EFFECT

Mingxing Du^*
, Jinlei Xin
, Wanrong Yao
, Ziwei Ouyang

^*Corresponding author for this work

Tianjin University of Technology

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

This paper studies the temperature dependence of threshold voltage，body diode voltage，drain-source on-state resistance in SiC MOSFET，analyzes the effect of bias temperature instability（BTI）on V_TH ，and explores the mechanism of its effect on temperature-sensitive electrical parameters（TSEPs）. In addition，considering the influence of temperature and BTI on V_TH ，a method for threshold voltage monitoring employing SiC MOSFET body diode voltage under body effect at low current injection is proposed. The proposed method can monitor the threshold voltage at different junction temperatures（ T_j ）and provides help for correcting the accuracy of junction temperature measurement by other TSEPs. The theoretical and experimental results demonstrate the feasibility of the proposed method.

Translated title of the contribution	ACCURATE MONITORING METHOD OF SiC MOSFET THRESHOLD VOLTAGE CONSIDERING THERMOELECTRIC COUPLING EFFECT
Original language	Chinese (Traditional)
Journal	Taiyangneng Xuebao/Acta Energiae Solaris Sinica
Volume	44
Issue number	2
Pages (from-to)	445-452
ISSN	0254-0096
DOIs	https://doi.org/10.19912/j.0254-0096.tynxb.2021-1124
Publication status	Published - 1 Feb 2023

Keywords

Bias temperature instability
Condition monitoring
Power MOSFET
Silicon carbide
Temperature- sensitive electrical parameters

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title = "计及热电耦合效应的SiC MOSFET阈值电压精确监测方法",

abstract = "This paper studies the temperature dependence of threshold voltage，body diode voltage，drain-source on-state resistance in SiC MOSFET，analyzes the effect of bias temperature instability（BTI）on VTH ，and explores the mechanism of its effect on temperature-sensitive electrical parameters（TSEPs）. In addition，considering the influence of temperature and BTI on VTH ，a method for threshold voltage monitoring employing SiC MOSFET body diode voltage under body effect at low current injection is proposed. The proposed method can monitor the threshold voltage at different junction temperatures（ Tj ）and provides help for correcting the accuracy of junction temperature measurement by other TSEPs. The theoretical and experimental results demonstrate the feasibility of the proposed method.",

keywords = "Bias temperature instability, Condition monitoring, Power MOSFET, Silicon carbide, Temperature- sensitive electrical parameters",

author = "Mingxing Du and Jinlei Xin and Wanrong Yao and Ziwei Ouyang",

year = "2023",

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day = "1",

doi = "10.19912/j.0254-0096.tynxb.2021-1124",

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T1 - 计及热电耦合效应的SiC MOSFET阈值电压精确监测方法

AU - Du, Mingxing

AU - Xin, Jinlei

AU - Yao, Wanrong

AU - Ouyang, Ziwei

PY - 2023/2/1

Y1 - 2023/2/1

N2 - This paper studies the temperature dependence of threshold voltage，body diode voltage，drain-source on-state resistance in SiC MOSFET，analyzes the effect of bias temperature instability（BTI）on VTH ，and explores the mechanism of its effect on temperature-sensitive electrical parameters（TSEPs）. In addition，considering the influence of temperature and BTI on VTH ，a method for threshold voltage monitoring employing SiC MOSFET body diode voltage under body effect at low current injection is proposed. The proposed method can monitor the threshold voltage at different junction temperatures（ Tj ）and provides help for correcting the accuracy of junction temperature measurement by other TSEPs. The theoretical and experimental results demonstrate the feasibility of the proposed method.

AB - This paper studies the temperature dependence of threshold voltage，body diode voltage，drain-source on-state resistance in SiC MOSFET，analyzes the effect of bias temperature instability（BTI）on VTH ，and explores the mechanism of its effect on temperature-sensitive electrical parameters（TSEPs）. In addition，considering the influence of temperature and BTI on VTH ，a method for threshold voltage monitoring employing SiC MOSFET body diode voltage under body effect at low current injection is proposed. The proposed method can monitor the threshold voltage at different junction temperatures（ Tj ）and provides help for correcting the accuracy of junction temperature measurement by other TSEPs. The theoretical and experimental results demonstrate the feasibility of the proposed method.

KW - Bias temperature instability

KW - Condition monitoring

KW - Power MOSFET

KW - Silicon carbide

KW - Temperature- sensitive electrical parameters

U2 - 10.19912/j.0254-0096.tynxb.2021-1124

DO - 10.19912/j.0254-0096.tynxb.2021-1124

M3 - Tidsskriftartikel

AN - SCOPUS:85150436301

SN - 0254-0096

VL - 44

SP - 445

EP - 452

JO - Taiyangneng Xuebao/Acta Energiae Solaris Sinica

JF - Taiyangneng Xuebao/Acta Energiae Solaris Sinica

IS - 2

ER -

计及热电耦合效应的SiC MOSFET阈值电压精确监测方法

Abstract

Keywords

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