考虑寄生电感的SiC MOSFET半桥电路串扰峰值预测方法

Translated title of the contribution: CROSSTALK PEAK PREDICTION METHOD FOR HALF-BRIDGE CIRCUIT OF SiC MOSFET CONSIDERING PARASITIC INDUCTANCE

Mingxing Du*, Weiguo Bian, Ziwei Ouyang

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Aiming at the crosstalk problem in photovoltaic grid-connected inverter,a crosstalk peak prediction algorithm for non-Kelvin packaged SiC MOSFET considering the effect of parasitic inductance is proposed. The half-bridge circuit composed of To-247-3 package SiC MOSFET is studied. Firstly,the mathematical model of crosstalk voltages in each stage are analyzed,and the differential expressions of crosstalk voltage are derived;Secondly,the prediction algorithm of crosstalk peak is proposed,and the mathematical models of the parameters required to predict the crosstalk peak are established;Finally,an experimental platform is built to verify the correctness of the theory and the effectiveness of the algorithm.

Translated title of the contributionCROSSTALK PEAK PREDICTION METHOD FOR HALF-BRIDGE CIRCUIT OF SiC MOSFET CONSIDERING PARASITIC INDUCTANCE
Original languageChinese (Traditional)
JournalTaiyangneng Xuebao/Acta Energiae Solaris Sinica
Volume44
Issue number1
Pages (from-to)16-23
ISSN0254-0096
DOIs
Publication statusPublished - Jan 2023

Keywords

  • Crosstalk
  • Grid-connected inverter
  • Half-bridge circuit
  • MOSFET
  • Parasitic inductance
  • Silicon carbide

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