Abstract
Aiming at the crosstalk problem in photovoltaic grid-connected inverter,a crosstalk peak prediction algorithm for non-Kelvin packaged SiC MOSFET considering the effect of parasitic inductance is proposed. The half-bridge circuit composed of To-247-3 package SiC MOSFET is studied. Firstly,the mathematical model of crosstalk voltages in each stage are analyzed,and the differential expressions of crosstalk voltage are derived;Secondly,the prediction algorithm of crosstalk peak is proposed,and the mathematical models of the parameters required to predict the crosstalk peak are established;Finally,an experimental platform is built to verify the correctness of the theory and the effectiveness of the algorithm.
Translated title of the contribution | CROSSTALK PEAK PREDICTION METHOD FOR HALF-BRIDGE CIRCUIT OF SiC MOSFET CONSIDERING PARASITIC INDUCTANCE |
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Original language | Chinese (Traditional) |
Journal | Taiyangneng Xuebao/Acta Energiae Solaris Sinica |
Volume | 44 |
Issue number | 1 |
Pages (from-to) | 16-23 |
ISSN | 0254-0096 |
DOIs | |
Publication status | Published - Jan 2023 |
Keywords
- Crosstalk
- Grid-connected inverter
- Half-bridge circuit
- MOSFET
- Parasitic inductance
- Silicon carbide