Skip to main navigation Skip to search Skip to main content

ドーピング濃度の異なる 4H-SiC の電圧制御陽極酸化法による ポーラス結晶化特性

Translated title of the contribution: Porous crystallization properties of 4H-SiC with different doping concentrations by voltage-controlled anodization
  • Keita Kodera
  • , Taisei Mizuno
  • , Syota Akiyoshi
  • , W. Lu
  • , Yiyu Ou
  • , Motoaki Iwaya
  • , Tetsuya Takeuchi
  • , Satoshi Kamiyama
  • Meijo University
  • Xiamen University

Research output: Contribution to conference › Conference abstract for conference › Research › peer-review

72 Downloads (Orbit)
Translated title of the contributionPorous crystallization properties of 4H-SiC with different doping concentrations by voltage-controlled anodization
Original languageJapanese
Publication date2023
Number of pages1
Publication statusPublished - 2023
Event83rd JSAP Autumn Meeting 2022 - Tohoku University, Kwauchi-kita Campus, Sendai, Japan
Duration: 20 Sept 2022 → 23 Sept 2022

Conference

Conference83rd JSAP Autumn Meeting 2022
LocationTohoku University, Kwauchi-kita Campus
Country/TerritoryJapan
CitySendai
Period20/09/2022 → 23/09/2022

Access to Document

OpenUrl availability

Check availability in DTU Findit

    Cite this