Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP

F.I.  Zubov; Elizaveta Semenova; Irina Kulkova; Kresten Yvind; N.V.  Kryzhanovskaya; M.V.  Maximov; A.E.  Zhukov

doi:10.21883/FTP.2017.10.45017.8590

Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP

Translated title of the contribution: High characteristic temperature of near-1 µm InAs/GaAs/InGaAsP quantum dot laser on InP substrate

F.I. Zubov, Elizaveta Semenova, Irina Kulkova, Kresten Yvind, N.V. Kryzhanovskaya, M.V. Maximov, A.E. Zhukov

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We report on high temperature stability of a near-1.5 µm laser synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer were used as an active region of the laser. An InGaAsP quaternary alloy having the bandgap energy of 1.15 eV was utilized as a waveguiding/matrix layer. A high characteristic temperature of the threshold current of T0 = 205 K, evaluated in the temperature range of 20−50◦C, was achieved in ridge waveguide laser diodes. A correlation of T0 values with the bandgap energy of the waveguiding layer was found.

Translated title of the contribution	High characteristic temperature of near-1 µm InAs/GaAs/InGaAsP quantum dot laser on InP substrate
Original language	Russian
Journal	Technical Physics
Volume	51
Issue number	10
Pages (from-to)	1382-1386
ISSN	1063-7842
DOIs	https://doi.org/10.21883/FTP.2017.10.45017.8590
Publication status	Published - 2017

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Zubov, F. I., Semenova, E., Kulkova, I., Yvind, K., Kryzhanovskaya, N. V., Maximov, M. V., & Zhukov, A. E. (2017). Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP. Technical Physics, 51(10), 1382-1386. https://doi.org/10.21883/FTP.2017.10.45017.8590

Zubov, F.I. ; Semenova, Elizaveta ; Kulkova, Irina et al. / Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP. In: Technical Physics. 2017 ; Vol. 51, No. 10. pp. 1382-1386.

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title = "Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP",

abstract = "We report on high temperature stability of a near-1.5 µm laser synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer were used as an active region of the laser. An InGaAsP quaternary alloy having the bandgap energy of 1.15 eV was utilized as a waveguiding/matrix layer. A high characteristic temperature of the threshold current of T0 = 205 K, evaluated in the temperature range of 20−50◦C, was achieved in ridge waveguide laser diodes. A correlation of T0 values with the bandgap energy of the waveguiding layer was found.",

author = "F.I. Zubov and Elizaveta Semenova and Irina Kulkova and Kresten Yvind and N.V. Kryzhanovskaya and M.V. Maximov and A.E. Zhukov",

year = "2017",

doi = "10.21883/FTP.2017.10.45017.8590",

language = "Russisk",

volume = "51",

pages = "1382--1386",

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Zubov, FI, Semenova, E, Kulkova, I, Yvind, K, Kryzhanovskaya, NV, Maximov, MV & Zhukov, AE 2017, 'Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP', Technical Physics, vol. 51, no. 10, pp. 1382-1386. https://doi.org/10.21883/FTP.2017.10.45017.8590

Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP. / Zubov, F.I. ; Semenova, Elizaveta; Kulkova, Irina et al.
In: Technical Physics, Vol. 51, No. 10, 2017, p. 1382-1386.

Research output: Contribution to journal › Journal article › Research › peer-review

TY - JOUR

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AU - Zubov, F.I.

AU - Semenova, Elizaveta

AU - Kulkova, Irina

AU - Yvind, Kresten

AU - Kryzhanovskaya, N.V.

AU - Maximov, M.V.

AU - Zhukov, A.E.

PY - 2017

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N2 - We report on high temperature stability of a near-1.5 µm laser synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer were used as an active region of the laser. An InGaAsP quaternary alloy having the bandgap energy of 1.15 eV was utilized as a waveguiding/matrix layer. A high characteristic temperature of the threshold current of T0 = 205 K, evaluated in the temperature range of 20−50◦C, was achieved in ridge waveguide laser diodes. A correlation of T0 values with the bandgap energy of the waveguiding layer was found.

AB - We report on high temperature stability of a near-1.5 µm laser synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer were used as an active region of the laser. An InGaAsP quaternary alloy having the bandgap energy of 1.15 eV was utilized as a waveguiding/matrix layer. A high characteristic temperature of the threshold current of T0 = 205 K, evaluated in the temperature range of 20−50◦C, was achieved in ridge waveguide laser diodes. A correlation of T0 values with the bandgap energy of the waveguiding layer was found.

U2 - 10.21883/FTP.2017.10.45017.8590

DO - 10.21883/FTP.2017.10.45017.8590

M3 - Tidsskriftartikel

SN - 1063-7842

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SP - 1382

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JO - Technical Physics

JF - Technical Physics

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Zubov FI, Semenova E, Kulkova I, Yvind K, Kryzhanovskaya NV, Maximov MV et al. Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP. Technical Physics. 2017;51(10):1382-1386. doi: 10.21883/FTP.2017.10.45017.8590

Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP

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