Oxide-free silicon surfaces can exist for significant lengths of time under ultra-high vacuum (UHV) conditions. Therefore, if the two flat, dust-free silicon surfaces can be brought into contact in UHV, then direct interaction between silicon dangling bonds on the two surfaces should result in strong bonding even at low temperatures. This is an interesting alternative route to low-temperature silicon wafer bonding. In the project, centimeter-sized silicon chips have been bonded in UHV at temperatures as low as 450 C, and the interface mechanical and electronic properties have been investigated.
|Effective start/end date||01/02/1996 → 01/04/1997|
Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.