Spin-polarised transport in ferromagnet/semiconductor heterostructure

Project Details


A study of injection and precession effects for spin-polarised carriers. The project aims at the development of spin-FETs (Field Effect Transistors) consisting of ferromagnet/semiconductor/ferromagnet heterostructures (eg Fe/GaAs-GaAlAs/Fe or Fe-Ni/InAs-InGaAs/Fe-Ni). Collaboration with The Oersted Lab (NBI), Danish Institute of Fundamental Metrology and NTT Basic Research Labs, Atsugi, Japan.
Effective start/end date01/08/199831/01/1999


  • Unknown


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