Simulation of Float-Zone Silicon Single Crystal Growth.

    Project Details

    Description

    Single crystal silicon is the basic
    building material for nearly all
    semiconductor electronics and is
    therefore an important raw material for
    the electronics industry.
    Singlecrystalline silicon rods of very
    high purity can be manufactured by the
    Float Zone technique, in which a
    polycrystalline rod is molten locally
    using a radio frequency electromagnetic
    field induced by a narrow coil
    surrounding the rod. The molten silicon
    solidifies into a single crystal, which
    is sliced into thin wafers.
    Mathematical modelling is employed as a
    tool for investigating the Float Zone
    process. Of special interest is the dynamics of the molten zone, crusial for
    the stability of the process and the
    quality of the produced crystal. The
    computational work includes solving the
    Navier-Stokes equations for the molten
    silicon with a free surface moving
    boundary and with boundaries at which
    melting and solidification occur. The
    shape of the melt free surface is
    influenced by the AC electromagnetic
    field calculated from Maxwell's
    equations. Heat transfer from the free
    surface into the silicon melt is included
    together with buoyancy, gravitational,
    electromagnetic and surface tension
    forces.
    StatusFinished
    Effective start/end date01/08/199731/07/2000