The project aims at developing a new type of fast three terminal electronic devices based on superconductor/semiconductor (S/Sm) interfaces, and to gain a better fundamental understanding of the quantum mechanical processes responsible for the so-called proximity effect between normal conductors and superconductors. The hybrid S/Sm devices composed of Aluminium (S) and Gallium Arsenide (Sm), developed and used in the project, are synthesized by thin film crystal growth techniques in a molecular beam epitaxy (MBE) ultra high vacuum chamber, and subsequently processed by photo- and electron beam lithography. The MBE technique allows a control of the crystal growth on atomic monolayer scale, while electron beam lithography is used to achieve sub micrometer lateral spacing between adjacent superconducting contacts to the semiconductor. In order to reach below the critical temperature of Alumimium (1.2 K) the electronic transport in the devices is studied at cryogenic temperatures down to 300 mK.
|Effective start/end date||01/03/1995 → …|
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