QUantum dot Energy level Engineering for laser applicatioNs on InP and Si platforms

Project Details


This project is dedicated to the research of quantum dot (QD) epitaxial growth on both indium phosphide (InP) and silicon (Si) based platforms with the aim of creating superior gain material emitting in the 1.5‐1.6 μm wavelength range. The majority of the proposed research is quite fundamental but will have noticeable impact to device applications for our everyday life in the near future. Diverse areas like telecommunication, optical coherence tomography including medical applications, sensing, computer and network clock‐distribution, THz generation, and metrology can benefit from the materials investigated.
The projected research covers two directions. The first is the development of QDs which possess desired electronic and optical properties in the InP based material system, i.e. tailoring the energy level structure and wave functions in the dots. Manipulating the shape, chemical composition and surroundings of the
nanostructures is the key to achieving the set goals. In the frame of the project I will implement two different approaches to design and grow high optical quality arrays of QDs. Those approaches are self‐assembled quantum dot growth and selective area growth using block copolymer lithography. The second direction of the research is the deployment of the highly efficient QD gain material to a silicon platform. The development of epitaxial growth technology of III‐V materials on Si combines the benefits of high optical quality III‐V QD gain material with low cost silicon photonics, which is a key platform to push towards increased integration, higher speed and lower energy consumption.
Effective start/end date01/06/201331/08/2017

Collaborative partners


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