Project Details
Description
It has been found that thin aluminium films on silicon can be modified
by a focused laser beam or by an Atomic Force Microscope (AFM), to form either a positive or negative mask for lithographic processing of silicon. The objective of this research is to develop alternatives to electron beam lithography for rapid prototyping of micro- and
nanomechanical devices. With a 7nm thick aluminum film, structures with 100nm resolution have been defined by AFM, and larger scale structures can be connected to these by laser processing of the
aluminium. The specific advantage of aluminium is that it is an
excellent mask for Reactive Ion Etching of high-aspect ratio structures,
and that it is CMOS compatible.
by a focused laser beam or by an Atomic Force Microscope (AFM), to form either a positive or negative mask for lithographic processing of silicon. The objective of this research is to develop alternatives to electron beam lithography for rapid prototyping of micro- and
nanomechanical devices. With a 7nm thick aluminum film, structures with 100nm resolution have been defined by AFM, and larger scale structures can be connected to these by laser processing of the
aluminium. The specific advantage of aluminium is that it is an
excellent mask for Reactive Ion Etching of high-aspect ratio structures,
and that it is CMOS compatible.
| Status | Finished |
|---|---|
| Effective start/end date | 01/06/1997 → 01/01/2000 |
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