Project Details
Description
The SCOOP project has the goal of developing novel semiconductor devices for ultrafast optical signal processing in broadband optical networks. The modelling activity has to formulate mathematical models for the different device types and develop tools that can be used for analysing measurement results and designing/optimizing the devices. This requires a number of tasks to be considered:
Materials dynamics: Models that accuratelydescribe the materials (gain and index) dynamics down to a time scale of at least 1 picosecond need to be developed. Since the solution of microscopic (Semiconductor Bloch) equations are too demanding computationally, simpler models have to be derived. This is particularly challenging in the case of electro-absorption modulators, which are quantum well structures whose absorption can be changed by applying an electrical field. The transport of electrons accross the structure and the sweep-out from the quantum well are known to limit the device speed and needs to be carefully modelled.
Interferometric devices: By incorporating active semiconductor waveguides into interferometric structures of the Michelson or Mach-Zehnder type, it is possible to switch signals at very hight bit rates. Computer simulation tools are needed in order to help interpret measurements on actual devices. In particular it is interesting to understand the mechanisms that limit the bandwidth. The tools need to be detailed enough to allow for optimization of the device designs as well as exploration of new ideas.
Subsystem modelling: Device models are combined with models of signal sources, the transmission path and detectors to help understand the behaviour and limitations of the system as a whole. Presently, dispersion compensation of high-bit rate pulse trains using mid-span spectral inversion (phase conjugation) in a semiconductor laser amplifier has been analysed. The calculated results compare well with measurements.
Materials dynamics: Models that accuratelydescribe the materials (gain and index) dynamics down to a time scale of at least 1 picosecond need to be developed. Since the solution of microscopic (Semiconductor Bloch) equations are too demanding computationally, simpler models have to be derived. This is particularly challenging in the case of electro-absorption modulators, which are quantum well structures whose absorption can be changed by applying an electrical field. The transport of electrons accross the structure and the sweep-out from the quantum well are known to limit the device speed and needs to be carefully modelled.
Interferometric devices: By incorporating active semiconductor waveguides into interferometric structures of the Michelson or Mach-Zehnder type, it is possible to switch signals at very hight bit rates. Computer simulation tools are needed in order to help interpret measurements on actual devices. In particular it is interesting to understand the mechanisms that limit the bandwidth. The tools need to be detailed enough to allow for optimization of the device designs as well as exploration of new ideas.
Subsystem modelling: Device models are combined with models of signal sources, the transmission path and detectors to help understand the behaviour and limitations of the system as a whole. Presently, dispersion compensation of high-bit rate pulse trains using mid-span spectral inversion (phase conjugation) in a semiconductor laser amplifier has been analysed. The calculated results compare well with measurements.
Status | Finished |
---|---|
Effective start/end date | 01/01/1998 → 31/12/1999 |
Collaborative partners
- Technical University of Denmark (lead)
- GIGA A/S (Project partner)
Funding
- Unknown
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