Haiyan Ou

Wide Bandgap Semiconductor Photonics

  • Ørsteds Plads, 343, 210

    2800 Kgs. Lyngby

    Denmark

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Valdas Jokubavicius

  • Linköping University

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M. Syväjärvi

  • Linköping University

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Xin Ou

  • Chinese Academy of Sciences
  • CAS - Shanghai Institute of Microsystem and Information Technology

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Daisuke Iida

  • Meijo University

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Satoshi Kamiyama

  • Meijo University

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V. Jokubavicus

  • Linköping University

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M. Kaiser

  • Friedrich-Alexander University Erlangen-Nürnberg

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Kai Guo

  • Technical University of Denmark
  • National University of Defense Technology
  • Academy of Military Sciences

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Tetsuya Takeuchi

  • Meijo University

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Mikael Syväjärvi

  • Linköping University

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Didier Chaussende

  • Université Grenoble Alpes

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Motoaki Iwaya

  • Meijo University

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Isamu Akasaki

  • Meijo University
  • Nagoya University

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M. K. Linnarsson

  • KTH Royal Institute of Technology

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Ailun Yi

  • Chinese Academy of Sciences
  • CAS - Shanghai Institute of Microsystem and Information Technology

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Rositza Yakimova

  • Linköping University

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Mikael Syväjärvi

  • Linköping University

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Yoshimi Iwasa

  • Meijo University

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R. Yakimova

  • Linköping University

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P. Wellmann

  • Friedrich-Alexander University Erlangen-Nürnberg

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Ailun Yi

  • Chinese Academy of Sciences
  • CAS - Shanghai Institute of Microsystem and Information Technology

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Valdas Jokubavicius

  • Linköping University

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Peter Wellmann

  • Friedrich-Alexander University Erlangen-Nürnberg

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Xinliang Zhang

  • Huazhong University of Science and Technology

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Satoshi Kamiyama

  • Meijo University

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S. Kamiyama

  • Meijo University

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Vincent Tabouret

  • Université Grenoble Alpes

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Zhiqiang Liu

  • Chinese Academy of Sciences
  • CAS - Institute of Semiconductors
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  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application

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Xiaodong Shi

  • Technical University of Denmark

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R. Liljedahl

  • Linköping University

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D. Lida

  • Tokyo University of Technology

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Junbo Yang

  • National University of Defense Technology

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P. J. Wellmann

  • Friedrich-Alexander University Erlangen-Nürnberg

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M. Kollmuß

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Valdas Jokubavicius

  • Linköping University

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Xiaoyan Yi

  • Chinese Academy of Sciences
  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application

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Jingwei Li

  • Carnegie Mellon University

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P. Wellmann

  • Friedrich-Alexander University Erlangen-Nürnberg

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Ruixuan Wang

  • Carnegie Mellon University

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Peter Wellmann

  • Friedrich-Alexander University Erlangen-Nürnberg

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Philip Hens

  • Linköping University

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Margareta Linnarsson

  • KTH Royal Institute of Technology

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Michl Kaiser

  • Friedrich-Alexander University Erlangen-Nürnberg

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M. K. Linnarsson

  • KTH Royal Institute of Technology

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Mikael Syväjärvi

  • Linköping University

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Peter Wellmann

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Satoshi Kamiyama

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V. Jokubavicius

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Mikael Syväjärvi

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P. Hens

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Valdas Jokubavicius

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Tiangui You

  • Chinese Academy of Sciences

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Philipp Schuh

  • Friedrich-Alexander University Erlangen-Nürnberg

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Margareta Linnarsson

  • KTH Royal Institute of Technology

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Qing Li

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Mikael Syvajarvi

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M. K. Linnarsson

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Rositza Yakimova

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Taisei Mizuno

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Syota Akiyoshi

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J. W. Sun

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Xiaolin Wang

  • National University of Defense Technology

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Ulrike Künecke

  • Friedrich-Alexander University Erlangen-Nürnberg

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Valdas Jokubavicius

  • Linköping University

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Yutaka Miyamoto

  • NTT Corporation
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Yoma Yamane

  • Meijo University

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Guodong Yuan

  • CAS - Institute of Semiconductors
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  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application

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Jiehui Li

  • Fudan University

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P. Wellmann

  • Friedrich-Alexander University Erlangen-Nürnberg

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T. Hupfer

  • Friedrich-Alexander University Erlangen-Nürnberg

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Jianchang Yan

  • CAS - Institute of Semiconductors
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Xinliang Zhang

  • Huazhong University of Science and Technology

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V. Grivickas

  • Vilnius University

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Mikael Syväjärvi

  • Linköping University

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Satoshi kamiyama

  • Linköping University
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Jingjing Zhang

  • Jiangsu University

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P. Wellmann

  • Friedrich-Alexander University Erlangen-Nürnberg

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P. Wellmann

  • Friedrich-Alexander University Erlangen-Nürnberg

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Xiang Ma

  • SINTEF
  • CAS - Institute of High Energy Physics

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Margareta Linnarsson

  • KTH Royal Institute of Technology

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Jinmin Li

  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application

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Motoaki Iwaya

  • Meijo University

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Nan Chi

  • Fudan University

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Jiehui Li

  • Fudan University

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Rickard Liljedahl

  • Linköping University

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Dan Friis

  • RGB Sydfalster

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Nan Chi

  • Fudan University

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Jianwu Sun

  • Linköping University

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Mikael Syväjärvi

  • Linköping University

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S. Schimmel

  • Friedrich-Alexander University Erlangen-Nürnberg

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Yuntian Chen

  • French Alternative Energies and Atomic Energy Commission

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S. Schimmel

  • Friedrich-Alexander University Erlangen-Nürnberg

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Imran Aijaz

  • Technical University of Denmark

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M. Kaiser

  • Friedrich-Alexander University Erlangen-Nürnberg

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V. Jokubavicius

  • Linköping University

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Mark D. Pelusi

  • University of Sydney
  • National Institute of Advanced Industrial Science and Technology

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S. Schimmel

  • Linköping University

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Saskia Schimmel

  • Friedrich-Alexander University Erlangen-Nürnberg

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Steffen Ruttinger

  • PicoQuant GmbH

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Junxi Wang

  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application

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M. Wilhelm

  • Friedrich-Alexander University Erlangen-Nürnberg

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Meng Liang

  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application

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Yunyu Wang

  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application

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Kai Huang

  • Guangxi University
  • Chinese Academy of Sciences

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Zhaoyue Lu

  • Technical University of Denmark

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Jianwu Sun

  • Linköping University

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Michl Kaiser

  • Friedrich-Alexander University Erlangen-Nürnberg

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Mikael Syväjärvi

  • Linköping University

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Tetsuya Takeuchi

  • Meijo University

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Kosuke Yanai

  • Meijo University

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Xinliang Zhang

  • Huazhong University of Science and Technology

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Fang Ren

  • CAS - Institute of Semiconductors
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Jinping Ao

  • Tokushima University

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Rickard Liljedahl

  • Linköping University

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Jochen Schröder

  • University of Sydney

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Volker Buschmann

  • PicoQuant GmbH

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Xuanming Liu

  • Academy of Military Sciences

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M. Syväjärvi

  • Linköping University

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Martin Romme Henriksen

  • University of Copenhagen

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Yue Yin

  • CAS - Institute of Semiconductors
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  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application

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M. Kaiser

  • Friedrich-Alexander University Erlangen-Nürnberg

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Dexiu Huang

  • Huazhong University of Science and Technology

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Tongbo Wei

  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences

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V. Jokubavicius

  • Linköping University

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Asbjørn A. Jørgensen

  • University of Copenhagen
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Francesco La Via

  • National Research Council of Italy

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Keita Kodera

  • Meijo University

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R. Liljedahl

  • Linköping University

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Shumin Wang

  • CAS - Shanghai Institute of Microsystem and Information Technology

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Dexiu Huang

  • Huazhong University of Science and Technology

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Valdas Jokubavičius

  • Linköping University

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Karolis Gulbinas

  • Vilnius University

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Margareta Linnarsson

  • KTH Royal Institute of Technology

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Salvatore Tudisco

  • National Institute for Nuclear Physics

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Joerg Wrachtrup

  • University of Stuttgart

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S. Kamiyama

  • Meijo University

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Regine Hock

  • University of Oslo
  • University of Alaska Fairbanks

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Signhild Gehlin

  • Energi & Miljø

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Dexiu Huang

  • Huazhong University of Science and Technology

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Xinliang Zhang

  • Huazhong University of Science and Technology

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M. K. Linnarsson

  • KTH Royal Institute of Technology

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Teng Zhan

  • Chinese Academy of Sciences

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Vytautas Grivickas

  • Vilnius University

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Q. Li

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Xinyu Liu

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E. D. Mallemace

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Y. Fukuchi

  • Tokyo University of Science

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L. Lei

  • Huazhong University of Science and Technology

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Hao Huang

  • University of Pennsylvania
  • The Children's Hospital of Philadelphia

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Di Zhu

  • Agency for Science, Technology and Research, Singapore
  • National University of Singapore

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Jun Ma

  • Chinese Academy of Sciences
  • Southeast University, Nanjing
  • Ministry of Water Resources, P.R. China

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Gregory Berthomé

  • Université Grenoble Alpes

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Wen Liu

  • Huazhong University of Science and Technology

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Jing Xu

  • Xiamen University

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J. Xu

  • Huazhong University of Science and Technology

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Florian Kaiser

  • University of Stuttgart

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Alberto Parini

  • Université de Rennes

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M. Kaisr

  • Friedrich-Alexander University Erlangen-Nürnberg

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Xuefeng Chen

  • Fuzhou University
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Stéphane Coindeau

  • Université Grenoble Alpes

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Xinliang Zhang

  • Huazhong University of Science and Technology

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Jochen Köhler

  • Norwegian University of Science and Technology
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Marina Radulaski

  • University of California at Davis

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Jianjun Yu

  • Fudan University

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Xinliang Zhang

  • Wuhan University of Science and Technology
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P. Wellmann

  • Friedrich-Alexander University Erlangen-Nürnberg

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Xiaoyan Yi

  • CAS - Institute of Semiconductors

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Stephen E. Saddow

  • University of South Florida

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Dexiu Huang

  • Huazhong University of Science and Technology

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B. Tillack

  • Technische Universität Berlin

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Jiangbo Zhu

  • Fudan University

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Yong-hao Luo

  • Shanghai Jiao Tong University

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Saskia Schimmel

  • Friedrich-Alexander University Erlangen-Nürnberg

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J. Müller

  • Friedrich-Alexander University Erlangen-Nürnberg

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Veerendra Dhyani

  • Agency for Science, Technology and Research, Singapore

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K. Ariyawong

  • Linköping University

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Satoshi Kamiyama

  • Meijo University

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Michl Kaiser

  • Friedrich-Alexander University Erlangen-Nürnberg

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Lionel C. Gontard

  • Instituto de Ciencia de Materiales de Sevilla

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Philip Neudeck

  • NASA Glenn Research Center

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Meng Liang

  • CAS - Institute of Semiconductors

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Xinying Li

  • Fudan University

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Sihao Wang

  • Agency for Science, Technology and Research, Singapore

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Zhiqiang Liu

  • CAS - Institute of Semiconductors

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S. Rao

  • Mediterranea University of Reggio Calabria

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Brett C. Johnson

  • Royal Melbourne Institute of Technology University

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Shumin Wang

  • Chalmers University of Technology

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R. Liljedahl

  • Linköping University

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Jian Wu Sun

  • Linköping University

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Dong Pyo Han

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Martin Aagesen

  • Gasp Solar ApS

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Klaus Petermann

  • Technical University of Berlin

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Liu Liu

  • South China Normal University

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A. Gajda

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T. Hupfer

  • Friedrich-Alexander University Erlangen-Nürnberg

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Xinliang Zhang

  • Huazhong University of Science and Technology

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Junwen Zhang

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Filippo Giannazzo

  • National Research Council of Italy

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Chunfang Cao

  • CAS - Shanghai Institute of Microsystem and Information Technology

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Cristian Bonato

  • Heriot-Watt University

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Philipp Schuh

  • University of Erlangen-Nuremberg

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Dongzhe Li

  • Université Fédérale Toulouse Midi-Pyrénées

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Chen Wang

  • Xiamen University
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Stefania Castelletto

  • Royal Melbourne Institute of Technology University

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L. Zimmermann

  • Innovations for High Performance Microelectronics GmbH

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J. W. Sun

  • Linköping University

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Wei Huang

  • Jinan University

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Dexiu Huang

  • Wuhan University of Science and Technology

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M. Syväjärvi

  • Linköping University

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V. Jokubavicius

  • KTH Royal Institute of Technology

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Guangyang Lin

  • Xiamen University

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Johannes Steiner

  • Friedrich-Alexander University Erlangen-Nürnberg

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K. Gulbinas

  • Vilnius University

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F. G. Della Corte

  • University of Naples Federico II

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R. Yakimova

  • Linköping University

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Daniel Alquier

  • Université de Tours

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Mikael Syväjävi

  • Linköping University

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Magali Morais

  • Université Grenoble Alpes

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J. Sun

  • Linköping University
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Rositza Yakimova

  • Linköping University

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Liu Liu

  • South China Normal University

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Rosita Yakimova

  • Linköping University

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Valdas Jakubavicius

  • Linköping University

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Li Tao

  • Fudan University

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P. Wellmann

  • Friedrich-Alexander University Erlangen-Nürnberg

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Shihao Huang

  • Xiamen University

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Xiaoling Lan

  • Xiamen University

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Jie Xu

  • Beihang University
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  • Technical University of Denmark
  • Sichuan University
  • Southwest Medical University
  • Harbin Institute of Technology

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M. Kaiser

  • Friedrich-Alexander University Erlangen-Nürnberg

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J. Li

  • Carnegie Mellon University

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Rafal E. Dunin-Borkowski

  • Forschungszentrum Jülich GmbH

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P. Hens

  • Linköping University

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Peter Wellmann

  • Friedrich-Alexander University Erlangen-Nürnberg

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Sakthi Sanjeev Mohanraj

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Siyuan Yu

  • University of Bristol

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Alexandre Crisci

  • Université Grenoble Alpes

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Haoye Qin

  • Tsinghua University

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Yu Yu

  • Huazhong University of Science and Technology

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Peter Wellmann

  • University of Erlangen-Nuremberg

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Ze Dong

  • ZTE Corporation

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Daiki Jinno

  • Meijo University

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  • Linköping University

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Tsunenobu Kimoto

  • Kyoto University

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Yuxin Song

  • Chalmers University of Technology

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Jo Verbeeck

  • University of Antwerp

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Jiangbin Wei

  • Xiamen University

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Liu Liu

  • South China Normal University

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Pernille Klarskov

  • Aarhus University

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Margareta K. Linnarsson

  • KTH Royal Institute of Technology

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Victor Leong

  • Agency for Science, Technology and Research, Singapore

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Xinliang Zhang

  • Huazhong University of Science and Technology

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Xinliang Zhang

  • Wuhan National Laboratory for Optoelectronics
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Alberto Roncaglia

  • National Research Council of Italy

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Kai Huang

  • Chinese Academy of Sciences

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E. Spiecker

  • Friedrich-Alexander University Erlangen-Nürnberg

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Ziran Zhang

  • Fudan University

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Xinliang Zhang

  • Huazhong University of Science and Technology

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M. Kaiser

  • Friedrich-Alexander University Erlangen-Nürnberg

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Guohuan Sun

  • Chinese Academy of Medical Sciences

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R. Wang

  • Carnegie Mellon University

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Minghong Gao

  • National University of Defense Technology

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Rickard Liljedahl

  • Linköping University

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Jiacheng Feng

  • National University of Defense Technology

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Philippe Boutinaud

  • Université Clermont Auvergne

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Hui Jing

  • Technical University of Denmark

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Songyan Chen

  • Xiamen University

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Wen Liu

  • Huazhong University of Science and Technology

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Alberto Peruzzo

  • Royal Melbourne Institute of Technology University

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R. Yakimova

  • Linköping University

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Cheng Li

  • Xiamen University

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