Engineering
Aluminium-Doped Zinc Oxide
60%
Application Requirement
5%
Atomic Layer Deposition
13%
Carbon Nanotubes
6%
Chemical Sensor
6%
Chemical Vapor Deposition
6%
Combined Process
5%
Conductive
13%
Current-Voltage Characteristic
5%
Dielectric Layer
6%
Dry Etching
10%
Electrical Contact
6%
Electron Optical Lithography
26%
End Effector
6%
Energy Engineering
6%
Etching Process
15%
Focused Ion Beam
6%
Graphene
40%
High Aspect Ratio
6%
High Resolution
20%
Hole Diameter
5%
Interlayer
20%
Layer Graphene
28%
Light Extraction Efficiency
10%
Light-Emitting Diode
100%
Mass Production
5%
Microfabrication
6%
Microscale
20%
Nanoimprint Lithography
20%
Nanopatterning
20%
Nanopillar
25%
Nanoscale
25%
Nanotubes
6%
Nanowires
25%
Ohmic Contacts
10%
Optical Lithography
7%
Optical Sensors
6%
Oxide Layer
10%
Pattern Transfer
5%
Photovoltaics
5%
Polysilicon
6%
Series Resistance
5%
Silicon Dioxide (Sio2)
5%
Single-Walled Carbon Nanotube
6%
Sio2 Layer
5%
Solar Cell
6%
Thin Films
20%
Transmissions
20%
Ultraviolet Light
84%
Vapor Deposition
10%
Material Science
Adhesive Bonding
21%
Aluminum
21%
Boron
5%
Carbon Nanotubes
13%
Chemical Vapor Deposition
5%
Density
6%
Dielectric Material
12%
Dry Etching
25%
Electroluminescence
12%
Electroplating
5%
Film
8%
Focused Ion Beam
6%
Graphene
20%
Light-Emitting Diode
60%
Lithography
26%
Luminescence
20%
Materials Design
5%
Metal Oxide
5%
Microfabrication
6%
Nanocrystalline Material
25%
Nanotubes
6%
Nanowires
22%
Nitride Compound
6%
Optical Device
9%
Oxide Compound
5%
Photoluminescence
24%
Polymer Injection Molding
10%
Silicon
20%
Silicon Carbide
40%
Silicon Compound
5%
Silicon Dioxide
20%
Silicon Wafer
5%
Silsesquioxane
20%
Solar Cell
8%
Thin Films
20%
Wet Etching
5%
Zinc Oxide
20%
Keyphrases
Aluminum-doped Zinc Oxide
20%
Bilayer Graphene
20%
Blazed Grating
5%
Chemical Deposition
5%
Current Spreading Layer
40%
Current-voltage (I-V) Characteristics
5%
Design Depth
5%
Electroluminescence
10%
Electroluminescence Intensity
5%
Epi-wafer
5%
GaN-based
15%
Graphene
20%
Graphene Layer
15%
High Time Efficiency
5%
In Situ Transmission Electron Microscope
20%
Indium Gallium Nitride (InGaN)
20%
Ion Milling
5%
Large Series
5%
Large-area Nanopatterning
20%
Ligand Exchange Reaction
5%
Light-emitting Diodes
5%
Micro-nano Systems
5%
Milling Tool
5%
Nanogrippers
20%
Nanotechnology Based Systems
5%
Near Ultraviolet Light
10%
Near-ultraviolet Light-emitting Diode
30%
Oxide-based
10%
Photonics Polymer
5%
Self-terminating
5%
Series Resistance
5%
Silicon Compounds
5%
Stress Layer
5%
Ultraviolet Light-emitting Diode (UV-LED)
20%
Warm White Emission
6%
