Description
The effect of annealing on the crystal growth and orientation of Sb2S3 absorbers, as a promising quasi-1D material for photovoltaic applications, is investigated. The absorbers were deposited by sputtering of Sb2S3 target on two types of substrates, i.e., Mo/soda-lime glass - SLG (Mo) and MoS2/Mo/SLG (MoS2). The precursor films were annealed under an N2 atmosphere in a temperature range from 3000C to 4500C. All the absorbing films were characterized using Raman spectroscopy, X-ray diffraction analysis (XRD), and scanning electron microscopy (SEM). The Raman and XRD data revealed that the Sb2S3 phase is observed in all the absorbers. However, the Sb2S3 absorbers on the Mo substrates exhibit the Sb10S15 and Sb2(SO4) phases, and present many pinholes on the surface, which become more pronounced with increasing the annealing temperature. The vertically aligned MoS2 substrates appear to promote an enhanced [hk1] orientation of the Sb2S3 absorbers annealed below 3500C, while the SEM images show that Sb2S3 absorbers are pinhole-free at temperatures below 400C and present an average grain size of 2.5 μm. Finally, we will present our findings on the fabrication of Cd-free Sb2S3 solar cells with Zn(1−x)MgxO (ZMO) as an n-type buffer layer.| Period | 5 Jul 2023 → 7 Jul 2023 |
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| Held at | Polytechnic University of Catalonia, Spain |
| Degree of Recognition | International |