Excitation power dependence of the photoluminescence emission in 6H silicon carbide

  • Abebe Tilahun Tarekegne (Speaker)
  • Ou, H. (Guest lecturer)

Activity: Talks and presentations › Conference presentations

Description

The ICSCRM is the premier forum for technical discussion in all areas of silicon carbide (SiC) and other wide bandgap (WBG) semiconductors. The topics covered in the ICSCRM include bulk and epitaxial growth, fundamental physical properties, defect characterization and engineering, quantum technology, surfaces and interfaces, device fabrication processes, devices (high-power, high-temperature, RF power, radiation-resistant devices, etc.), packaging, modular and circuit technologies, and system applications for SiC and related materials including other WBG semiconductors such as III-nitrides, oxides, and diamond.
Period29 Sept 2019 → 4 Oct 2019
Event titleInternational Conference on Silicon Carbide and Related Materials 2019
Event typeConference
Conference number18
LocationKyoto, JapanShow on map

Keywords

  • Silicon carbide
  • Photoluminecesce
  • Power dependence

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