DescriptionThe ICSCRM is the premier forum for technical discussion in all areas of silicon carbide (SiC) and other wide bandgap (WBG) semiconductors. The topics covered in the ICSCRM include bulk and epitaxial growth, fundamental physical properties, defect characterization and engineering, quantum technology, surfaces and interfaces, device fabrication processes, devices (high-power, high-temperature, RF power, radiation-resistant devices, etc.), packaging, modular and circuit technologies, and system applications for SiC and related materials including other WBG semiconductors such as III-nitrides, oxides, and diamond.
|Period||29 Sep 2019 → 4 Oct 2019|
|Event title||International Conference on Silicon Carbide and Related Materials 2019|
- Silicon carbide
- Power dependence
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