Systematic study of shallow junction formation on germanium substrates

Research output: Contribution to journalConference article – Annual report year: 2011Researchpeer-review

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Published results on Ge junctions are benchmarked systematically using RS–XJ plots. The electrical activation level required to meet the ITRS targets is calculated. Additionally, new results are presented on shallow furnace-annealed B junctions and shallow laser-annealed As junctions. Co-implanting B junctions with F is shown to degrade junction properties.
Original languageEnglish
JournalMicroelectronic Engineering
Volume88
Issue number4
Pages (from-to)347-350
ISSN0167-9317
DOIs
Publication statusPublished - 2011
EventPost-Si-CMOS electronic devices: the role of Ge and III-V materials -
Duration: 1 Jan 2011 → …

Conference

ConferencePost-Si-CMOS electronic devices: the role of Ge and III-V materials
Period01/01/2011 → …
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • Ultra Shallow Junction, Arsenic, Mobility, Sheet Resistance, Germanium, Boron
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