Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedings – Annual report year: 2009Researchpeer-review

View graph of relations

In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high dopant activation using LTA process for over 70%, excellent within shot activation uniformity, and there was a possibility for overlap parameter optimization. It was observed that, for activation LTA process, shallow box-shaped profiles- high diffusivity of B in liquids and high-temperatures was observed only near the surface in a submicrosecond timescale. Possible solutions were suggested as to low-cost and high-end for overlap optimization and full-die exposure optics.
Original languageEnglish
Title of host publication17th International Conference on Advanced Thermal Processing of Semiconductors, 2009. RTP '09.
PublisherIEEE
Publication date2009
Pages1-19
ISBN (Print)978-1-4244-3814-3
DOIs
Publication statusPublished - 2009
Event17th International Conference on Advanced Thermal Processing of Semiconductors RTP09 - Albany, United States
Duration: 29 Sep 20092 Oct 2009
Conference number: 17

Conference

Conference17th International Conference on Advanced Thermal Processing of Semiconductors RTP09
Number17
CountryUnited States
CityAlbany
Period29/09/200902/10/2009
CitationsWeb of Science® Times Cited: No match on DOI
Download as:
Download as PDF
Select render style:
APAAuthorCBE/CSEHarvardMLAStandardVancouverShortLong
PDF
Download as HTML
Select render style:
APAAuthorCBE/CSEHarvardMLAStandardVancouverShortLong
HTML
Download as Word
Select render style:
APAAuthorCBE/CSEHarvardMLAStandardVancouverShortLong
Word

ID: 5533773