Widely Tunable High-Power Tapered Diode Laser at 1060 nm
Publication: Research - peer-review › Journal article – Annual report year: 2011
We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range.
| Original language | English |
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| Journal | I E E E Photonics Technology Letters |
| Publication date | 2011 |
| Volume | 23 |
| Journal number | 21 |
| Pages | 1624-1626 |
| ISSN | 1041-1135 |
| DOIs | |
| State | Published |
| Citations | Web of Science® Times Cited: 1 |
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Keywords
- Semiconductor lasers, Tapered lasers, Quantum-well lasers, Laser tuning
ID: 5830419