Widely Tunable High-Power Tapered Diode Laser at 1060 nm

Publication: Research - peer-reviewJournal article – Annual report year: 2011

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We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range.
Original languageEnglish
JournalI E E E Photonics Technology Letters
Publication date2011
Volume23
Journal number21
Pages1624-1626
ISSN1041-1135
DOIs
StatePublished
CitationsWeb of Science® Times Cited: 2

Keywords

  • Semiconductor lasers, Tapered lasers, Quantum-well lasers, Laser tuning
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