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Silicon microheaters for local growth of a vertically aligned carbon nanotube (VACNT) were fabricated. The microheaters had a four-point-probe structure that measured the silicon conductivity variations in the heated region which is a measure of the temperature. Through FEM simulations the temperature was determined on the entire microheater structure, and the simulated temperatures were verified by micro-Raman spectroscopy. The microheaters provided a temperature gradient along which VACNTs were grown at 575–800 °C simultaneously. The VACNT growth activation energy was determined to 0.86 eV from the VACNT growth rate variation along the microheater's temperature gradient.

Original languageEnglish
JournalJournal of Micromechanics and Microengineering
Publication date2011
Volume21
Issue1
Pages015004
ISSN09601317
DOIs
StatePublished
CitationsWeb of Science® Times Cited: 5

Keywords

  • Methods of nanofabrication and processing, Other nonmetallic inorganics, Nanotubes
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