Ultranarrow polaritons in a semiconductor microcavity

Publication: Research - peer-reviewJournal article – Annual report year: 2000

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We have achieved a record high ratio (19) of the Rabi splitting (3.6 meV) to the polariton linewidth (190 mu eV), in a semiconductor lambda microcavity with a single 25 nm GaAs quantum well at the antinode. The narrow polariton lines are obtained with a special cavity design which reduces the exciton broadening due to scattering with free charges and has a very low spatial gradient of the cavity resonance energy. Since the static quantum-well disorder is very small, the polariton broadening is dominantly homogeneous. Still, the measured linewidths close to zero detuning cannot be correctly predicted using the linewidth averaging model. (C) 2000 American Institute of Physics.
Original languageEnglish
JournalApplied Physics Letters
Publication date2000
Volume76
Issue22
Pages3262-3264
ISSN0003-6951
DOIs
StatePublished

Bibliographical note

Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

CitationsWeb of Science® Times Cited: 30

Keywords

  • QUANTUM-WELL EXCITONS
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