Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

Publication: Research - peer-reviewJournal article – Annual report year: 2011

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Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing. / Hellings, G.; Rosseel, E.; Simoen, E.; Radisic, D.; Petersen, Dirch Hjorth; Hansen, Ole; Nielsen, P.F.; Zschatzsch, G.; Nazir, A.; Clarysse, T.; Vandervorst, W.; Hoffmann, T.Y.; De Meyer, K.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 1, 2011, p. H39-H41.

Publication: Research - peer-reviewJournal article – Annual report year: 2011

Harvard

Hellings, G, Rosseel, E, Simoen, E, Radisic, D, Petersen, DH, Hansen, O, Nielsen, PF, Zschatzsch, G, Nazir, A, Clarysse, T, Vandervorst, W, Hoffmann, TY & De Meyer, K 2011, 'Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing' Electrochemical and Solid-State Letters, vol 14, no. 1, pp. H39-H41., 10.1149/1.3512990

APA

Hellings, G., Rosseel, E., Simoen, E., Radisic, D., Petersen, D. H., Hansen, O., Nielsen, P. F., Zschatzsch, G., Nazir, A., Clarysse, T., Vandervorst, W., Hoffmann, T. Y., & De Meyer, K. (2011). Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing. Electrochemical and Solid-State Letters, 14(1), H39-H41. 10.1149/1.3512990

CBE

Hellings G, Rosseel E, Simoen E, Radisic D, Petersen DH, Hansen O, Nielsen PF, Zschatzsch G, Nazir A, Clarysse T, Vandervorst W, Hoffmann TY, De Meyer K. 2011. Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing. Electrochemical and Solid-State Letters. 14(1):H39-H41. Available from: 10.1149/1.3512990

MLA

Vancouver

Author

Hellings, G.; Rosseel, E.; Simoen, E.; Radisic, D.; Petersen, Dirch Hjorth; Hansen, Ole; Nielsen, P.F.; Zschatzsch, G.; Nazir, A.; Clarysse, T.; Vandervorst, W.; Hoffmann, T.Y.; De Meyer, K. / Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 1, 2011, p. H39-H41.

Publication: Research - peer-reviewJournal article – Annual report year: 2011

Bibtex

@article{66c62c0ef9224852b1174493c18173dd,
title = "Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing",
publisher = "Electrochemical Society, Inc.",
author = "G. Hellings and E. Rosseel and E. Simoen and D. Radisic and Petersen, {Dirch Hjorth} and Ole Hansen and P.F. Nielsen and G. Zschatzsch and A. Nazir and T. Clarysse and W. Vandervorst and T.Y. Hoffmann and {De Meyer}, K.",
year = "2011",
doi = "10.1149/1.3512990",
volume = "14",
number = "1",
pages = "H39--H41",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",

}

RIS

TY - JOUR

T1 - Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

A1 - Hellings,G.

A1 - Rosseel,E.

A1 - Simoen,E.

A1 - Radisic,D.

A1 - Petersen,Dirch Hjorth

A1 - Hansen,Ole

A1 - Nielsen,P.F.

A1 - Zschatzsch,G.

A1 - Nazir,A.

A1 - Clarysse,T.

A1 - Vandervorst,W.

A1 - Hoffmann,T.Y.

A1 - De Meyer,K.

AU - Hellings,G.

AU - Rosseel,E.

AU - Simoen,E.

AU - Radisic,D.

AU - Petersen,Dirch Hjorth

AU - Hansen,Ole

AU - Nielsen,P.F.

AU - Zschatzsch,G.

AU - Nazir,A.

AU - Clarysse,T.

AU - Vandervorst,W.

AU - Hoffmann,T.Y.

AU - De Meyer,K.

PB - Electrochemical Society, Inc.

PY - 2011

Y1 - 2011

N2 - Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3) for a junction depth of 31 nm. Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy and spectroscopic ellipsometry.

AB - Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3) for a junction depth of 31 nm. Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy and spectroscopic ellipsometry.

U2 - 10.1149/1.3512990

DO - 10.1149/1.3512990

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 1

VL - 14

SP - H39-H41

ER -