Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

Publication: Research - peer-reviewJournal article – Annual report year: 2011

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Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3) for a junction depth of 31 nm. Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy and spectroscopic ellipsometry.
Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number1
Pages (from-to)H39-H41
ISSN1099-0062
DOIs
StatePublished - 2011
Peer-reviewedYes
CitationsWeb of Science® Times Cited: 15
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