Type-II Quantum Dot Nanowire Structures with Large Oscillator Strengths for Optical Quantum Gating Applications

Publication: Research - peer-reviewArticle in proceedings – Annual report year: 2017

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The exciton oscillator strength (OS) in type-II quantum dot (QD) nanowires is calculated by using a fast and efficient method. We propose a new structure in Double-Well QD (DWQD) nanowire that considerably increases OS of type-II QDs which is a key parameter in optical quantum gating in the stimulated Raman adiabatic passage (STIRAP) process [1] for implementing quantum gates.
Original languageEnglish
Title of host publicationProceedings of NUSOD 2017
Publication date2017
Pages7-8
ISBN (print)978-1-5090-5323-0
StatePublished - 2017
Event17th International Conference on. Numerical Simulation of Optoelectronic Devices - Lyngby, Denmark

Conference

Conference17th International Conference on. Numerical Simulation of Optoelectronic Devices
LocationTechnical University of Denmark
CountryDenmark
CityLyngby
Period24/07/201728/07/2017
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