Transport in Silicon Nanowires: Role of Radial Dopant Profile
Publication: Research - peer-review › Journal article – Annual report year: 2008
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Transport in Silicon Nanowires: Role of Radial Dopant Profile. / Markussen, Troels; Rurali, Riccardo; Jauho, Antti-Pekka; Brandbyge, Mads.
In: Journal of Computational Electronics, Vol. 7, No. 3, 2008, p. 324-327.Publication: Research - peer-review › Journal article – Annual report year: 2008
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TY - JOUR
T1 - Transport in Silicon Nanowires: Role of Radial Dopant Profile
A1 - Markussen,Troels
A1 - Rurali,Riccardo
A1 - Jauho,Antti-Pekka
A1 - Brandbyge,Mads
AU - Markussen,Troels
AU - Rurali,Riccardo
AU - Jauho,Antti-Pekka
AU - Brandbyge,Mads
PB - Springer New York LLC
PY - 2008
Y1 - 2008
N2 - We consider the electronic transport properties of phosphorus (P) doped silicon nanowires (SiNWs). By combining ab initio density functional theory (DFT) calculations with a recursive Green's function method, we calculate the conductance distribution of up to 200 nm long SiNWs with different distributions of P dopant impurities. We find that the radial distribution of the dopants influences the conductance properties significantly: surface doped wires have longer mean-free paths and smaller sample-to-sample fluctuations in the cross-over from ballistic to diffusive transport. These findings can be quantitatively predicted in terms of the scattering properties of the single dopant atoms, implying that relatively simple calculations are sufficient in practical device modeling.
AB - We consider the electronic transport properties of phosphorus (P) doped silicon nanowires (SiNWs). By combining ab initio density functional theory (DFT) calculations with a recursive Green's function method, we calculate the conductance distribution of up to 200 nm long SiNWs with different distributions of P dopant impurities. We find that the radial distribution of the dopants influences the conductance properties significantly: surface doped wires have longer mean-free paths and smaller sample-to-sample fluctuations in the cross-over from ballistic to diffusive transport. These findings can be quantitatively predicted in terms of the scattering properties of the single dopant atoms, implying that relatively simple calculations are sufficient in practical device modeling.
U2 - 10.1007/s10825-007-0156-4
DO - 10.1007/s10825-007-0156-4
JO - Journal of Computational Electronics
JF - Journal of Computational Electronics
SN - 1569-8025
IS - 3
VL - 7
SP - 324
EP - 327
ER -