Transport in Silicon Nanowires: Role of Radial Dopant Profile

Publication: Research - peer-reviewJournal article – Annual report year: 2008

Standard

Transport in Silicon Nanowires: Role of Radial Dopant Profile. / Markussen, Troels; Rurali, Riccardo; Jauho, Antti-Pekka; Brandbyge, Mads.

In: Journal of Computational Electronics, Vol. 7, No. 3, 2008, p. 324-327.

Publication: Research - peer-reviewJournal article – Annual report year: 2008

Harvard

APA

CBE

MLA

Vancouver

Author

Markussen, Troels; Rurali, Riccardo; Jauho, Antti-Pekka; Brandbyge, Mads / Transport in Silicon Nanowires: Role of Radial Dopant Profile.

In: Journal of Computational Electronics, Vol. 7, No. 3, 2008, p. 324-327.

Publication: Research - peer-reviewJournal article – Annual report year: 2008

Bibtex

@article{1dc04b8f47cf4ce3a8cd00a7019db104,
title = "Transport in Silicon Nanowires: Role of Radial Dopant Profile",
publisher = "Springer New York LLC",
author = "Troels Markussen and Riccardo Rurali and Antti-Pekka Jauho and Mads Brandbyge",
year = "2008",
volume = "7",
number = "3",
pages = "324--327",
journal = "Journal of Computational Electronics",
issn = "1569-8025",

}

RIS

TY - JOUR

T1 - Transport in Silicon Nanowires: Role of Radial Dopant Profile

A1 - Markussen,Troels

A1 - Rurali,Riccardo

A1 - Jauho,Antti-Pekka

A1 - Brandbyge,Mads

AU - Markussen,Troels

AU - Rurali,Riccardo

AU - Jauho,Antti-Pekka

AU - Brandbyge,Mads

PB - Springer New York LLC

PY - 2008

Y1 - 2008

N2 - We consider the electronic transport properties of phosphorus (P) doped silicon nanowires (SiNWs). By combining ab initio density functional theory (DFT) calculations with a recursive Green's function method, we calculate the conductance distribution of up to 200 nm long SiNWs with different distributions of P dopant impurities. We find that the radial distribution of the dopants influences the conductance properties significantly: surface doped wires have longer mean-free paths and smaller sample-to-sample fluctuations in the cross-over from ballistic to diffusive transport. These findings can be quantitatively predicted in terms of the scattering properties of the single dopant atoms, implying that relatively simple calculations are sufficient in practical device modeling.

AB - We consider the electronic transport properties of phosphorus (P) doped silicon nanowires (SiNWs). By combining ab initio density functional theory (DFT) calculations with a recursive Green's function method, we calculate the conductance distribution of up to 200 nm long SiNWs with different distributions of P dopant impurities. We find that the radial distribution of the dopants influences the conductance properties significantly: surface doped wires have longer mean-free paths and smaller sample-to-sample fluctuations in the cross-over from ballistic to diffusive transport. These findings can be quantitatively predicted in terms of the scattering properties of the single dopant atoms, implying that relatively simple calculations are sufficient in practical device modeling.

U2 - 10.1007/s10825-007-0156-4

DO - 10.1007/s10825-007-0156-4

JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

SN - 1569-8025

IS - 3

VL - 7

SP - 324

EP - 327

ER -