Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz

Publication: Research - peer-reviewJournal article – Annual report year: 2018

DOI

  • Author: Weimann, Nils G.

    University of Duisburg-Essen, Germany

  • Author: Johansen, Tom Keinicke

    Electromagnetic Systems, Department of Electrical Engineering, Technical University of Denmark, Ørsteds Plads, 2800, Kgs. Lyngby, Denmark

  • Author: Stoppel, Dimitri

    Ferdinand-Braun-Institut, Germany

  • Author: Matalla, Matthias

    Ferdinand-Braun-Institut, Germany

  • Author: Brahem, Mohamed

    Ferdinand-Braun-Institut, Germany

  • Author: Nosaeva, Ksenia

    Ferdinand-Braun-Institut, Germany

  • Author: Boppel, Sebastian

    Ferdinand-Braun-Institut, Germany

  • Author: Volkmer, Nicole

    Ferdinand-Braun-Institut, Germany

  • Author: Ostermay, Ina

    Ferdinand-Braun-Institut, Germany

  • Author: Krozer, Viktor

    Ferdinand-Braun-Institut, Germany

  • Author: Ostinelli, Olivier

    ETH Zurich, Switzerland

  • Author: Bolognesi, Colombo R.

    ETH Zurich, Switzerland

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We report on the realization of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-μm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies.
Original languageEnglish
JournalI E E E Transactions on Electron Devices
Volume65
Issue number9
Pages (from-to)3704 - 3710
ISSN0018-9383
DOIs
StatePublished - 2018
CitationsWeb of Science® Times Cited: 0

    Keywords

  • Gallium arsenide antimonide, Heterojunction bipolar transistors, Indium phosphide, Millimeterwave (mm-wave) integrated circuits, Submillimeter-wave (sub-mm-wave) integrated circuits
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