Towards quantitative three-dimensional characterisation of buried InAs quantum dots

Publication: Research - peer-reviewConference article – Annual report year: 2011

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InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe tomography.
Original languageEnglish
Book seriesJournal of Physics: Conference Series
Publication date2011
Volume326
Issue1
Pages012046
ISSN1742-6588
DOIs
StatePublished

Conference

Conference17th International Conference on Microscopy of Semiconducting Materials
Number17
CountryUnited Kingdom
CityCambridge
Period04/04/1107/04/11
CitationsWeb of Science® Times Cited: 1
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