The Deposition and Control of self Assembled Silicon nano Islands on Crystalline Silicon

Publication: Research - peer-reviewBook chapter – Annual report year: 2009

Without internal affiliation

  • Author: Kiebach, Wolff-Ragnar


  • Author: Yu, Zhenrui

    National Institute for Astrophysics, Optics, and Electronics

  • Author: Aceves-Mijares, Mariano

    National Institute for Astrophysics, Optics, and Electronics

  • Author: Bian, Dongcai

    Tianjin Polytechnical University

  • Author: Du, Jinhui

    Tianjin Polytechnical University

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The formation of nano sized Si structures during the annealing of silicon rich oxide (SRO) films was investigated. These films were synthesized by low pressure chemical vapor deposition (LPCVD) and used as precursors, a post-deposition thermal annealing leads to the formation of Si nano crystals in the SiO2 matrix and Si nano islands (Si nI) at c-Si/SRO interface. The influences of the excess Si concentration, the incorporation of N in the SRO precursors, and the presence of a Si concentration gradient on the Si nI formation were studied. Additionally the influence of pre-deposition substrate surface treatments on the island formation was investigated. Therefore, the substrate surface was mechanical scratched, producing high density of net-like scratches on the surface. Scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) were used to characterize the synthesized nano islands. Results show that above mentioned parameters have significant influences on the Si nIs. High density nanosized Si islands can epitaxially grow from the c-Si substrate. The reported method is very simple and completely compatible with Si integrated circuit technology.
Original languageEnglish
Title of host publicationFrontiers in Electronics
PublisherWorld Scientific Publishing Co Pte Ltd
Publication date2009
ISBN (electronic)9789814273022
StatePublished - 2009
NameSelected Topics in Electronics and Systems
CitationsWeb of Science® Times Cited: No match on DOI
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ID: 6322710